Silicon-Bridge Rectifiers

Silicon-Bridge Rectifiers • Nominal current 15 A • Alternating input voltage 35…1000 V • Metallgehäuse (Index “M”) oder • Dimensions 28.6 x 28.6 x 7.3 [mm] • Weight approx. 23 g • Compound has classification UL94V-0 • S

Silicon-Bridge Rectifiers

Forward Current: 15 A Reverse Voltage: 50 to 1600 V Features • max. solder tmeperature 260°C max 5s • UL recognized, file no. E63532 • Standard packaging: bulk • VISO > 2500 V

Silicon-Bridge Rectifiers

Forward Current: 15 A Reverse Voltage: 50 to 1600 V Features • max. solder tmeperature 260°C max 5s • UL recognized, file no. E63532 • Standard packaging: bulk • VISO > 2500 V

Silicon-Bridge Rectifiers

Silicon-Bridge Rectifiers • Nominal current 15 A • Alternating input voltage 35…1000 V • Metallgehäuse (Index “M”) oder • Dimensions 28.6 x 28.6 x 7.3 [mm] • Weight approx. 23 g • Compound has classification UL94V-0 • S

Silicon-Bridge Rectifiers

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Silicon-Bridge Rectifiers

文件：281.06 Kbytes Page：2 Pages

Dual 1 Form A/B, C Solid State Relay

Dual 1 Form A/B, C Solid State Relay DESCRIPTION The LH1512 relays contain normally open and normally closed switches that can be used independently as a 1 form A and 1 form B relay, or when used together, as a 1 form C relay. The relays are constructed as a mult.-chip hybrid device. Act

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GENERAL DESCRIPTION The STLC1512 G.lite line driver chip contains the line driver as well as part of the receive path required in a central office G.lite modem. It provides an interface between the AFE chip (STLC1511) and the telephone line. The line driver chip has been designed with low power c

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DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to thei optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all freewheel mode

TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to thei optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all freewheel mode

TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to thei optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all freewheel mode