10 AMP SILICON BRIDGE RECTIFIER

FEATURES • Rating to 1000V PRV • Ideal for printed circuit board • Surge overload rating to 150 Amperes peak • Reliable low cost construction utilizing molded plastic technique results in inexpensive product ▪ UL - recognized: File #106441 ▪ UL - recognized 94V-O plastic material

10A SINGLE-PHASE BRIDGE RECTIFIER

Features • Diffused Junction • Low Reverse Leakage Current • Low Power Loss, High Efficiency • Electrically Isolated Epoxy Case for Maximum Heat Dissipation • Case to Terminal Isolation Voltage 2500V • Recognized File # E157705

10A SINGLE PHASE BRIDGE RECTIFIER

Diffused Junction Low Reverse Leakage Current Low Power Loss, High Efficiency Heatsink Integrated Epoxy Case for Maximum Heat Dissipation Low Thermal Resistance High Surge Current Capability Recognized File # E157705

Square Type

10A SINGLE PHASE BRIDGE RECTIFIER

Diffused Junction Low Reverse Leakage Current Low Power Loss, High Efficiency Heatsink Integrated Epoxy Case for Maximum Heat Dissipation Low Thermal Resistance High Surge Current Capability Recognized File # E157705

SILICON BRIDGE RECTIFIER

VOLTAGE RANGE 50 - 1000 Volts CURRENT 10.0 Amperes FEATURES * Surge overload rating 200 amperes peak * Low forward voltage drop * Small size : simple installation * Silver-plated copper leads

10A SINGLE-PHASE BRIDGE RECTIFIER

Features • Diffused Junction • Low Reverse Leakage Current • Low Power Loss, High Efficiency • Electrically Isolated Epoxy Case for Maximum Heat Dissipation • Case to Terminal Isolation Voltage 2500V • Recognized File # E157705

10A SINGLE PHASE BRIDGE RECTIFIER

Diffused Junction Low Reverse Leakage Current Low Power Loss, High Efficiency Heatsink Integrated Epoxy Case for Maximum Heat Dissipation Low Thermal Resistance High Surge Current Capability Recognized File # E157705

Square Type

SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 10.0 Amperes)

FEATURES • For thorough hole applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated junction • High temperature solde

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

Integrated Circuit FM IF TV Amp

Features: ● Excellent Limiting Characteristics ● High Gain ● High AM Rejection Ratio ● Wide Band Amp