Silicon-Bridge Rectifiers

Silicon-Bridge Rectifiers • Nominal current 10 A • Alternating input voltage 35 . . . 1000 V • Metal case (Index M) or Plastic case with alu-bottom (Index P) • Dimensions 28.6 x 28.6 x

Silicon-Bridge Rectifiers

Silicon-Bridge Recitifers

Forward Current: 10 A Reverse Voltage: 50 to 1600 V Features • max. solder temperature 260°C, max. 5s • UL recognized, file no. E63532 • Standard packaging: bulk • VISO > 2500 VISO

Silicon-Bridge Recitifers

Forward Current: 10 A Reverse Voltage: 50 to 1600 V Features • max. solder temperature 260°C, max. 5s • UL recognized, file no. E63532 • Standard packaging: bulk • VISO > 2500 VISO

Silicon-Bridge Rectifiers

Silicon-Bridge Rectifiers • Nominal current 10 A • Alternating input voltage 35 . . . 1000 V • Metal case (Index M) or Plastic case with alu-bottom (Index P) • Dimensions 28.6 x 28.6 x

Silicon-Bridge Recitifers

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SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 10.0 Amperes)

FEATURES • For thorough hole applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated junction • High temperature solde

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

Integrated Circuit FM IF TV Amp

Features: ● Excellent Limiting Characteristics ● High Gain ● High AM Rejection Ratio ● Wide Band Amp