丝印代码：KBJ1002；Bridge Rectifiers

Features UL recognition, file #230084 Glass passivated chip junction Thin single in-ine package High surge current capabilty Solder dip 275 °C max. 7 s, per JESD 22-8106.

丝印代码：KBJ1002；Bridge Rectifiers

Features ● UL recognition, file #E230084 ● Thin single in-line package ● High surge current capability ● Solder dip 275 °C max. 7 s, per JESD 22-B106

1 A Single-Phase Silicon Bridge Rectifier Rectifier Reverse Voltage 50 to 1000V

Features Plastic package has Underwriters Laboratory Flammability Classification 94V-0 High case dielectric strength of 1500VRMS Ideal for printed circuit boards High surge current capability

BRIDGE RECTIFIERS 10 Amps

BRIDGE RECTIFIERS 10 Amps

SILICON BRIDGE RECTIFIERS

文件：114.15 Kbytes Page：2 Pages

SILICON BRIDGE RECTIFIERS

文件：41.11 Kbytes Page：2 Pages

10A GLASS PASSIVATED BRIDGE RECTIFIER Reverse

文件：503.38 Kbytes Page：3 Pages

Voltage 50V ~ 1000V 10Amp Glass Passivated Bridge Rectifiers

文件：211.47 Kbytes Page：2 Pages

10 Amps Single-Phase Silicon Bridge Rectifiers High surge current capability

文件：138.52 Kbytes Page：2 Pages

GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER

文件：1.14007 Mbytes Page：2 Pages

GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER

文件：588.43 Kbytes Page：2 Pages

SINGLE PHASE10.0AMPS.GLASS PASSIVATED BRIDGE RECTIFIERS

文件：203.23 Kbytes Page：2 Pages

Bridge Rectifiers

文件：151.11 Kbytes Page：4 Pages

GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER

文件：568.89 Kbytes Page：2 Pages

Bridge Rectifier

文件：132.11 Kbytes Page：2 Pages

SINGLE PHASE 10.0 AMP BRIDGE RECTIFIERS

文件：67.07 Kbytes Page：2 Pages

SINGLE PHASE 10.0 AMPS GLASS PASSIVATED BRIDGE RECTIFIERS

文件：514.419 Kbytes Page：2 Pages

丝印代码：MDDKBJ1002；GLASS PASSIVATED BRIDGE RECTIFIERS

文件：520 Kbytes Page：2 Pages

桥式整流器

整流桥

整流桥

10 Amp GLASS PASSIVATED BRIDGE RECTIFIERS 50 to 1000 Volts

文件：354.21 Kbytes Page：3 Pages

SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 10.0 Amperes)

FEATURES • For thorough hole applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated junction • High temperature solde

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

Integrated Circuit FM IF TV Amp

Features: ● Excellent Limiting Characteristics ● High Gain ● High AM Rejection Ratio ● Wide Band Amp