双向晶闸管

额定电压：4200V\n额定电流：1000 ● 反并联芯片集成\n● 平板压装、双面冷却\n● 大功率容量\n● 低损耗;

双向晶闸管

双向晶闸管具有隔离效果好，开关损耗小，关断时间短等特点。其组件小而轻的特点，可满足航天军工、船舶、矿业等对重量体积要求要高的应用领域。

VHF variable capacitance diode

DESCRIPTION The BB910 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD68 (DO-34) package. FEATURES • Excellent linearity • Matched to 2.5 • Hermetically sealed leaded glass SOD68 (DO-34) package • C28: 2.5; ratio:

POWER TRANSISTORS(15A,90W)

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD909 and BD911 are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are BD910 and BD912 respectively. ■ STMicroelectronics PREFERRED SALESTYPES

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor is encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap. All leads are isolated from the flange. FEATURES • Internal input matching to achieve high power gain

Variable gain RF predriver amplifier

DESCRIPTION The SA910 is a variable gain predriver amplifier designed for handheld analog cellular telephones. When used with a UHF power transistor, it forms a cost-effective, low-profile, surface mount power amplifier solution (1.2W maximum PAE > 50). The SA910 integrates power detection and