型号 功能描述 生产厂家&企业 LOGO 操作
K9F5608U0C-Y

512Mb/256Mb 1.8V NAND Flash Errata

GENERAL DESCRIPTION Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0C is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typica

Samsung

三星

K9F5608U0C-Y

512Mb/256Mb 1.8V NAND Flash Errata

GENERAL DESCRIPTION Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0C is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typica

Samsung

三星

K9F5608U0C-Y

32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

GENERAL DESCRIPTION Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0C is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typica

Samsung

三星

K9F5608U0C-Y

32M x 8 Bit 16M x 16 Bit NAND Flash Memory

文件:680.69 Kbytes Page:41 Pages

Samsung

三星

512Mb/256Mb 1.8V NAND Flash Errata

GENERAL DESCRIPTION Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0C is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typica

Samsung

三星

512Mb/256Mb 1.8V NAND Flash Errata

GENERAL DESCRIPTION Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0C is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typica

Samsung

三星

512Mb/256Mb 1.8V NAND Flash Errata

GENERAL DESCRIPTION Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0C is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typica

Samsung

三星

32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

GENERAL DESCRIPTION Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0C is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typica

Samsung

三星

512Mb/256Mb 1.8V NAND Flash Errata

GENERAL DESCRIPTION Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0C is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typica

Samsung

三星

32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

文件:604.93 Kbytes Page:34 Pages

Samsung

三星

32M x 8 Bit 16M x 16 Bit NAND Flash Memory

文件:680.69 Kbytes Page:41 Pages

Samsung

三星

K9F5608U0C-Y产品属性

  • 类型

    描述

  • 型号

    K9F5608U0C-Y

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    512Mb/256Mb 1.8V NAND Flash Errata

更新时间:2025-8-11 23:39:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG
存储器
TSOP48
40569
SAMSUNG存储芯片K9F5608U0C-YIB0即刻询购立享优惠#长期有货
SAMSUNG/三星
24+
NA/
4250
原装现货,当天可交货,原型号开票
SAMSUNG
2016+
TSSOP
2980
公司只做原装,假一罚十,可开17%增值税发票!
SAM
23+
NA
20000
全新原装假一赔十
SAMSUNG
24+
TSOP48
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
SAMSUNG
2023+
TSOP
62000
现货特价
24+
TSOP48
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
三星
24+/25+
TSSOP-48
78
原装正品现货库存价优
SAMSUNG
2016+
TSOP48
6523
只做进口原装现货!假一赔十!
SAMSUNG
1237+
TSOP
3
一级代理,专注军工、汽车、医疗、工业、新能源、电力

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