型号 功能描述 生产厂家 企业 LOGO 操作
K9F2G08U

USB 2.0 high-speed Flash drive controller

文件:614.48 Kbytes Page:32 Pages

STMICROELECTRONICS

意法半导体

FLASH MEMORY

GENERAL DESCRIPTION Offered in 256Mx8bit, the K9F2G08X0A is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase o

Samsung

三星

FLASH MEMORY

GENERAL DESCRIPTION Offered in 256Mx8bit, the K9F2G08X0A is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase o

Samsung

三星

FLASH MEMORY

GENERAL DESCRIPTION Offered in 256Mx8bit, the K9F2G08X0A is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase o

Samsung

三星

256M x 8 Bit NAND Flash Memory

GENERAL DESCRIPTION Offered in 256Mx8bit, the K9F2G08X0B is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase ope

Samsung

三星

256M x 8 Bit NAND Flash Memory

GENERAL DESCRIPTION Offered in 256Mx8bit, the K9F2G08X0B is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase ope

Samsung

三星

FLASH MEMORY

GENERAL DESCRIPTION Offered in 256Mx8bit or 128Mx16bit, the K9F2GXXX0M is 2G bit with spare 64M bit capacity. Its NAND cell provides the most cost effective solution for the solid state mass storage market. A program operation can be performed in typical 300ms on the 2112-byte(X8 device) or 105

Samsung

三星

FLASH MEMORY

GENERAL DESCRIPTION Offered in 256Mx8bit, the K9F2G08X0A is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase o

Samsung

三星

256M x 8 Bit NAND Flash Memory

Samsung

三星

2Gb C-die NAND Flash

Samsung

三星

2Gb C-die NAND Flash

文件:707.1 Kbytes Page:39 Pages

Samsung

三星

2Gb C-die NAND Flash

文件:707.1 Kbytes Page:39 Pages

Samsung

三星

2Gb C-die NAND Flash

文件:707.1 Kbytes Page:39 Pages

Samsung

三星

2Gb D-die NAND Flash

Samsung

三星

256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory

文件:839.87 Kbytes Page:40 Pages

Samsung

三星

K9F2G08U产品属性

  • 类型

    描述

  • 型号

    K9F2G08U

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    FLASH MEMORY

更新时间:2026-1-4 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG(三星)
25+
7589
全新原装现货,支持排单订货,可含税开票
SAMSUNG
2016+
TSOP
15360
全新原装现货,只售原装,假一赔十!
SAMSUNG
24+
LGA53
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
SAMSUNG/三星
25+
TSOP-48
12496
SAMSUNG/三星原装正品K9F2G08UOB-PCBO即刻询购立享优惠#长期有货
SAMSUNG
24+
TSOP48
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
SAMSUNG/三星
24+
TSOP
20000
不忘初芯-只做原装正品
SAMSUNG
24+
FBGA
25480
专营三星DDR内存闪存原装进口现货
SAMSUNG/三星
原厂封装
9800
原装进口公司现货假一赔百
SAMSUNG
2013
TSOP48
6523
只做原装正品!假一赔十!
SAMSUNG
24+
TSSOP
6980
原装现货,可开13%税票

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    IS45S16160D-75ETLA1 ISSI TSOP-54 2017+ 49500 K4B2G1646F-BCK0T00 SAMSUNG FBGA-96 2018+ 40000 K4B4G0846E-BCMAT00 SAMSUNG FBGA-78 2018+ 50000 K4B8G0846D-MYK0000 SAMSUNG FBGA-78 2018+ 8090 K4M51323PI-HG75000 SAMSUNG FBGA-90 2012+ 300000 EDS1232AASE-75-E ELPIDA FBGA-90 2008+ 78482 FMS6416LBH-75EER

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