1Mx8 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X8008C2B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with lo

1Mx8 bit Low Power and Low Voltage CMOS Static RAM

1Mx8 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X8008C2B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with lo

1Mx8 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X8008C2B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with lo

1Mx8 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X8008C2B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with lo

1Mx8 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X8008C2B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with lo

1Mx8 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X8008C2B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with lo

1Mx8 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X8008C2B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with lo

1Mx8 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X8008C2B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with lo

1Mx8 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X8008C2B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with lo

1Mx8 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X8008C2B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with lo

1Mx8 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X8008C2B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with lo