1Mx8 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X8008C2B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with lo

1Mx8 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X8008C2B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with lo

1Mx8 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X8008C2B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with lo

1Mx8 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X8008C2B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with lo

1Mx8 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X8008C2B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with lo

1Mx8 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X8008C2B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with lo

1Mx8 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X8008C2B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with lo

1Mx8 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X8008C2B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with lo

1Mx8 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X8008C2B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with lo

1Mx8 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X8008C2B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with lo

1Mx8 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X8008C2B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with lo