位置：首页 > IC中文资料第5757页 > K6T4008C1B
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
K6T4008C1B | 512Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u | Samsung 三星 |   | |
512Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u | Samsung 三星 | | ||
512Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u | Samsung 三星 | | ||
512Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u | Samsung 三星 | | ||
512Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u | Samsung 三星 | | ||
512Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u | Samsung 三星 | | ||
512Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u | Samsung 三星 | | ||
512Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u | Samsung 三星 | | ||
512Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u | Samsung 三星 | | ||
512Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u | Samsung 三星 | | ||
512Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u | Samsung 三星 | | ||
512Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u | Samsung 三星 | | ||
512Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u | Samsung 三星 | | ||
512Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u | Samsung 三星 | | ||
512Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u | Samsung 三星 | | ||
512Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u | Samsung 三星 | | ||
512Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u | Samsung 三星 | | ||
512Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u | Samsung 三星 | | ||
512Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u | Samsung 三星 | | ||
512Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u | Samsung 三星 | | ||
512Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u | Samsung 三星 | | ||
512Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u | Samsung 三星 | | ||
512Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u | Samsung 三星 | | ||
512Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u | Samsung 三星 | | ||
512Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u | Samsung 三星 | |
K6T4008C1B产品属性
- 类型
描述
- 型号
K6T4008C1B
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
512Kx8 bit Low Power CMOS Static RAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
25+ |
SOP32 |
32360 |
SAMSUNG/三星全新特价K6T4008C1B-GB70即刻询购立享优惠#长期有货 |
|||
SAMSUNG |
24+ |
TSSOP |
8000 |
新到现货，只做全新原装正品 |
|||
SAMSUNG |
2025+ |
SOP32 |
3587 |
全新原厂原装产品、公司现货销售 |
|||
SAMSUNG |
24+ |
9651 |
原装现货,特价销售 |
||||
SAMSUNG/三星 |
22+ |
TSOP |
12245 |
现货,原厂原装假一罚十! |
|||
SAMSUNG/三星 |
25+ |
DIP32 |
1000 |
全新原装正品支持含税 |
|||
SAMSUNG/三星 |
25+ |
SOP |
13800 |
原装,请咨询 |
|||
SAMSUNG/三星 |
24+ |
SOJ36 |
9600 |
原装现货,优势供应,支持实单! |
|||
Samsung |
25+ |
370 |
公司优势库存 热卖中!! |
||||
SAMSUNG |
23+ |
SOP32 |
6000 |
原装正品假一罚百!可开增票! |
K6T4008C1B芯片相关品牌
K6T4008C1B规格书下载地址
K6T4008C1B参数引脚图相关
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K6T4008C1B数据表相关新闻
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K7805-500R3 ，全新原装当天发货或门市自取0755-82732291.
2019-11-15
DdatasheetPDF页码索引
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