512Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u

512Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u

512Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u

512Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u

512Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u