型号 功能描述 生产厂家 企业 LOGO 操作
K6T4008C

512Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u

Samsung

三星

K6T4008C

512Kx8 bit Low Power CMOS Static RAM

文件:169.86 Kbytes Page:9 Pages

Samsung

三星

K6T4008C

512Kx8 bit Low Power CMOS Static RAM

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T4008C1B families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-u

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

文件:169.86 Kbytes Page:9 Pages

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

文件:169.86 Kbytes Page:9 Pages

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

文件:169.86 Kbytes Page:9 Pages

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

文件:169.86 Kbytes Page:9 Pages

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

文件:169.86 Kbytes Page:9 Pages

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

文件:169.86 Kbytes Page:9 Pages

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

文件:169.86 Kbytes Page:9 Pages

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

文件:169.86 Kbytes Page:9 Pages

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

文件:169.86 Kbytes Page:9 Pages

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

文件:169.86 Kbytes Page:9 Pages

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

文件:169.86 Kbytes Page:9 Pages

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

文件:169.86 Kbytes Page:9 Pages

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

文件:169.86 Kbytes Page:9 Pages

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

文件:169.86 Kbytes Page:9 Pages

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

文件:169.86 Kbytes Page:9 Pages

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

文件:169.86 Kbytes Page:9 Pages

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

文件:169.86 Kbytes Page:9 Pages

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

文件:169.86 Kbytes Page:9 Pages

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

文件:169.86 Kbytes Page:9 Pages

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

文件:169.86 Kbytes Page:9 Pages

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

文件:169.86 Kbytes Page:9 Pages

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

文件:169.86 Kbytes Page:9 Pages

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

文件:169.86 Kbytes Page:9 Pages

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

文件:169.86 Kbytes Page:9 Pages

Samsung

三星

512Kx8 bit Low Power CMOS Static RAM

文件:169.86 Kbytes Page:9 Pages

Samsung

三星

K6T4008C产品属性

  • 类型

    描述

  • 型号

    K6T4008C

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    512Kx8 bit Low Power CMOS Static RAM

更新时间:2026-1-5 15:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
K
23+
SOP
5000
原装正品,假一罚十
SAMSUNG/三星
原厂封装
9800
原装进口公司现货假一赔百
SAMSUNG
20+
SOP
2860
原厂原装正品价格优惠公司现货欢迎查询
SAMSUNG/三星
2021+
SOP32
9450
原装现货。
SAMSUNG
24+
73
SAMSUNG
18+
DIP
85600
保证进口原装可开17%增值税发票
SAMSUNG
22+
原厂原封
8200
全新原装现货!自家库存!
SAMSUNG
26+
SOP
360000
原装现货
SAMSUNG
19+
DIP32
9000
SAMSUNG/三星
2025+
SOP
4950
原装进口价格优 请找坤融电子!

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