位置：首页 > IC中文资料第5646页 > K6R4004C1D-J
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
K6R4004C1D-J | 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges. 文件：245.22 Kbytes Page：10 Pages | Samsung 三星 |   | |
K6R4004C1D-J | 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges. | Samsung 三星 | | |
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges 文件：218.74 Kbytes Page：9 Pages | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5V Operating). 文件：155.64 Kbytes Page：8 Pages | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5V Operating). 文件：155.64 Kbytes Page：8 Pages | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5V Operating). 文件：155.64 Kbytes Page：8 Pages | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges 文件：218.74 Kbytes Page：9 Pages | Samsung 三星 | |
K6R4004C1D-J产品属性
- 类型
描述
- 型号
K6R4004C1D-J
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
25+ |
标准封装 |
18000 |
原厂直接发货进口原装 |
|||
SAMSUNG |
SOJ32 |
0437+/ |
6350 |
全新原装进口自己库存优势 |
|||
SAMSUNG |
NEW |
SOJ |
28610 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
SAMSUNG |
2023+ |
SMD |
17378 |
安罗世纪电子只做原装正品货 |
|||
SAMSUNG |
22+ |
SOJ |
8000 |
原装正品支持实单 |
|||
SAMSUNG/三星 |
18+ |
SOJ |
36033 |
全新原装现货,可出样品,可开增值税发票 |
|||
SAMSUNG |
SOJ |
450 |
正品原装--自家现货-实单可谈 |
||||
SAMSUNG |
新 |
5 |
全新原装 货期两周 |
||||
SAMSUNG |
23+ |
SOJ |
65480 |
||||
SAMSUNG |
2004 |
SOJ |
9167 |
现货库存/价格优惠热卖 |
K6R4004C1D-J规格书下载地址
K6R4004C1D-J参数引脚图相关
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- K60-075
- K60-065
K6R4004C1D-J数据表相关新闻
K7805-1000R3百分百原装，现货
K7805-1000R3百分百原装，现货
2024-9-18K521H12ACH-B050
K521H12ACH-B050 HYNIX 2020+ BGA K524G2GACJ-B050 SKHYNIX 2020+ BGA K521F57ACM-A060 HYNIX 2020+ BGA K524F2HACA-B050 SKHYNIX 2020+ BGA K521H12ACB-B060 HYNIX 2020+ BGA K524G2GACI-BO50 HYNIX 2020+ BGA K521F57ACC-B050000 HYNIX 2020+ BGA PM8018 HYNIX 2020 BGA PM8015 SKHYNIX 2020 BGA EMMC08G-W325 S
2021-5-26K6R4016C1D-UI10 静态存储器芯片 进口原装现货。
K6R4016C1D-UI10 进口原装现货。
2020-10-20K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
2020-2-24K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
2020-1-1K7805-500R3
K7805-500R3 ，全新原装当天发货或门市自取0755-82732291.
2019-11-15
DdatasheetPDF页码索引
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