位置：首页 > IC中文资料第6166页 > K6R3024V1D-HC12
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
K6R3024V1D-HC12 | 128Kx24BitHigh-SpeedCMOSStaticRAM(3.3VOperating) 文件：172.53 Kbytes Page：9 Pages | SamsungSamsung Group 三星三星半导体 |  |   |
K6R3024V1D-HC12产品属性
- 类型
描述
- 型号
K6R3024V1D-HC12
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
23+ |
标准封装 |
18000 |
||||
SAMSUNG-三星 |
24+25+/26+27+ |
SOJ-贴片 |
18800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
SAMSUMG |
6000 |
面议 |
19 |
SOJ |
|||
SAMSUNG |
2023+ |
TSOP |
50000 |
原装现货 |
|||
SAMSUNG |
22+ |
SOJ-32 |
4650 |
K6R3024V1D-HC12芯片相关品牌
K6R3024V1D-HC12规格书下载地址
K6R3024V1D-HC12参数引脚图相关
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K6R3024V1D-HC12数据表相关新闻
K521H12ACH-B050
K521H12ACH-B050HYNIX2020+BGA K524G2GACJ-B050SKHYNIX2020+BGA K521F57ACM-A060HYNIX2020+BGA K524F2HACA-B050SKHYNIX2020+BGA K521H12ACB-B060HYNIX2020+BGA K524G2GACI-BO50HYNIX2020+BGA K521F57ACC-B050000HYNIX2020+BGA PM8018HYNIX2020BGA PM8015SKHYNIX2020BGA EMMC08G-W325S
2021-5-26K6R4016C1D-UI10 静态存储器芯片 进口原装现货。
K6R4016C1D-UI10 进口原装现货。
2020-10-20K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
2020-2-24K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
2020-1-1K7805-500R3
K7805-500R3，全新原装当天发货或门市自取0755-82732291.
2019-11-15K521F13ACA-B060
K521F13ACA-B060
2019-11-4
DdatasheetPDF页码索引
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