位置：首页 > IC中文资料第5603页 > K6R1016V1D
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
K6R1016V1D | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1016V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016V1D uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. Also it allows that lo | Samsung 三星 |   | |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | |
K6R1016V1D产品属性
- 类型
描述
- 型号
K6R1016V1D
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG(三星) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
SOP44 |
25+ |
SAMSUNG |
12588 |
原装正品,自己库存 假一罚十 |
|||
SAMSUNG/三星 |
18+ |
TSOP |
35619 |
全新原装现货,可出样品,可开增值税发票 |
|||
SAMSUNG |
TSOP |
320 |
正品原装--自家现货-实单可谈 |
||||
SAMSUNG |
20+ |
SMD |
200 |
英卓尔科技,进口原装现货! |
|||
SAMSUNG |
20+ |
TSSOP |
2860 |
原厂原装正品价格优惠公司现货欢迎查询 |
|||
SAMSUNG/三星 |
2402+ |
TSOP-44 |
8324 |
原装正品!实单价优! |
|||
SAMSUNG/三星 |
24+ |
TSOP |
9600 |
原装现货,优势供应,支持实单! |
|||
SAMSUNG |
22+ |
TSOP44 |
8000 |
原装正品支持实单 |
|||
SAMSUNG |
2002 |
TSOP |
5212 |
现货库存/价格优惠热卖 |
K6R1016V1D规格书下载地址
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- K6R1016V1C-I15
- K6R1016V1C-I12
- K6R1016V1C-I10
- K6R1016V1C-C20
- K6R1016V1C-C15
- K6R1016V1C-C12
- K6R1016V1C-C10
- K6R1016V1C
- K6R1016C1D-UI10
- K6R1016C1D-UC10
- K6R1016C1D-TI10
- K6R1016C1D-TC10
- K6R1016C1D-KI10
- K6R1016C1D-KC10
- K6A65D
- K-683
- K-682
- K-681
- K-680
- K6283K
- K6268K
- K6265K
- K6264K
- K60-500
- K60-375
- K60-300
- K60-250
- K60-200
- K60-185
- K60-160
- K60-135
- K60-090
- K60-075
- K60-065
K6R1016V1D数据表相关新闻
K7805-1000R3百分百原装，现货
K7805-1000R3百分百原装，现货
2024-9-18K521H12ACH-B050
K521H12ACH-B050 HYNIX 2020+ BGA K524G2GACJ-B050 SKHYNIX 2020+ BGA K521F57ACM-A060 HYNIX 2020+ BGA K524F2HACA-B050 SKHYNIX 2020+ BGA K521H12ACB-B060 HYNIX 2020+ BGA K524G2GACI-BO50 HYNIX 2020+ BGA K521F57ACC-B050000 HYNIX 2020+ BGA PM8018 HYNIX 2020 BGA PM8015 SKHYNIX 2020 BGA EMMC08G-W325 S
2021-5-26K6R4016C1D-UI10 静态存储器芯片 进口原装现货。
K6R4016C1D-UI10 进口原装现货。
2020-10-20K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
2020-2-24K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
2020-1-1K521F13ACA-B060
K521F13ACA-B060
2019-11-4
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