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位置：首页 > IC中文资料第7626页 > K6R1004C1C

型号 功能描述 生产厂家 企业 LOGO 操作
K6R1004C1C

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERAL DESCRIPTION The K6R1004C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1C uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

Samsung

三星

K6R1004C1C-C

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERAL DESCRIPTION The K6R1004C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1C uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

Samsung

三星

K6R1004C1C-C10

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERAL DESCRIPTION The K6R1004C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1C uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

Samsung

三星

K6R1004C1C-C12

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERAL DESCRIPTION The K6R1004C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1C uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

Samsung

三星

K6R1004C1C-C15

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERAL DESCRIPTION The K6R1004C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1C uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

Samsung

三星

K6R1004C1C-C20

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERAL DESCRIPTION The K6R1004C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1C uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

Samsung

三星

K6R1004C1C-I

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERAL DESCRIPTION The K6R1004C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1C uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

Samsung

三星

K6R1004C1C-I10

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERAL DESCRIPTION The K6R1004C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1C uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

Samsung

三星

K6R1004C1C-I12

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERAL DESCRIPTION The K6R1004C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1C uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

Samsung

三星

K6R1004C1C-I15

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERAL DESCRIPTION The K6R1004C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1C uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

Samsung

三星

K6R1004C1C-I20

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERAL DESCRIPTION The K6R1004C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1C uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

Samsung

三星

K6R1004C1C-L

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERAL DESCRIPTION The K6R1004C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1C uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

Samsung

三星

K6R1004C1C-L10

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERAL DESCRIPTION The K6R1004C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1C uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

Samsung

三星

K6R1004C1C-L12

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERAL DESCRIPTION The K6R1004C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1C uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

Samsung

三星

K6R1004C1C-L15

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERAL DESCRIPTION The K6R1004C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1C uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

Samsung

三星

K6R1004C1C-P

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERAL DESCRIPTION The K6R1004C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1C uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

Samsung

三星

K6R1004C1C-P10

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERAL DESCRIPTION The K6R1004C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1C uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

Samsung

三星

K6R1004C1C-P12

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERAL DESCRIPTION The K6R1004C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1C uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

Samsung

三星

K6R1004C1C-P15

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERAL DESCRIPTION The K6R1004C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1C uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

Samsung

三星

K6R1004C1A

256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out

GENERAL DESCRIPTION The K6R1004C1A is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1A uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

Samsung

三星

K6R1004C1B

256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out

GENERAL DESCRIPTION The K6R1004C1B is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1B uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

Samsung

三星

K6R1004C1C产品属性

  • 类型

    描述

  • 型号

    K6R1004C1C

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    256Kx4 Bit(with OE) High-Speed CMOS Static RAM(5.0V Operating).

K6R1004C1C供应商更多...

更新时间：2025-11-20 14:22:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市科恒伟业电子有限公司
K6R1004C1C-JC15
SAMSUNG/三星
2450+
SOJ
9850
只做原厂原装正品现货或订货假一赔十!
询价
标准国际(香港)有限公司
K6R1004C1C-JC12
SAMSUNG
25+
9
公司优势库存 热卖中!!
询价
深圳市恒达亿科技有限公司
K6R1004C1C-JC15
SAMSUNG
25+
SOJ
3200
全新原装、诚信经营、公司现货销售
询价
深圳市威雅利发展有限公司
K6R1004C1D-JC10
SAMSUNG
04+
SOJ-32
25000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市诺美思科技有限公司
K6R1004C1D-JC10
SAMSUNG/三星
原厂封装
9800
原装进口公司现货假一赔百
询价
深圳市柯尔基电子有限公司
K6R1004C1D-JC10
SAMSUNG
23+24
SOJ-
9680
原盒原标.进口原装.支持实单 .价格优势
询价
深圳市欧立现代科技有限公司
K6R1004C1D-JC10
SAMSUNG
24+
6980
原装现货,可开13%税票
询价
深圳市一线半导体有限公司
K6R1004C1C-JC15
SAMSUNG
24+
SOJ
61
询价
深圳市安富世纪电子有限公司
K6R1004C1D-JC10
SAMSUNG
23+
SOJ-32
50000
全新原装正品现货,支持订货
询价
深圳市佳鑫美电子科技有限公司
K6R1004C1C-JC1
SAMSUNG
25+
SOJ
2679
原装优势!绝对公司现货!可长期供货!
询价

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K6R1004C1C规格书下载地址

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