位置：首页 > IC中文资料第7626页 > K6R1004C1C
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
K6R1004C1C | 256Kx4Bit(withOE)High-SpeedCMOSStaticRAM(5.0VOperating). GENERALDESCRIPTION TheK6R1004C1Cisa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Cuses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate | SamsungSamsung Group 三星三星半导体 |  |   |
256Kx4Bit(withOE)High-SpeedCMOSStaticRAM(5.0VOperating). GENERALDESCRIPTION TheK6R1004C1Cisa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Cuses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate | SamsungSamsung Group 三星三星半导体 | | | |
256Kx4Bit(withOE)High-SpeedCMOSStaticRAM(5.0VOperating). GENERALDESCRIPTION TheK6R1004C1Cisa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Cuses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate | SamsungSamsung Group 三星三星半导体 | | | |
256Kx4Bit(withOE)High-SpeedCMOSStaticRAM(5.0VOperating). GENERALDESCRIPTION TheK6R1004C1Cisa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Cuses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate | SamsungSamsung Group 三星三星半导体 | | | |
256Kx4Bit(withOE)High-SpeedCMOSStaticRAM(5.0VOperating). GENERALDESCRIPTION TheK6R1004C1Cisa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Cuses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate | SamsungSamsung Group 三星三星半导体 | | | |
256Kx4Bit(withOE)High-SpeedCMOSStaticRAM(5.0VOperating). GENERALDESCRIPTION TheK6R1004C1Cisa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Cuses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate | SamsungSamsung Group 三星三星半导体 | | | |
256Kx4Bit(withOE)High-SpeedCMOSStaticRAM(5.0VOperating). GENERALDESCRIPTION TheK6R1004C1Cisa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Cuses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate | SamsungSamsung Group 三星三星半导体 | | | |
256Kx4Bit(withOE)High-SpeedCMOSStaticRAM(5.0VOperating). GENERALDESCRIPTION TheK6R1004C1Cisa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Cuses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate | SamsungSamsung Group 三星三星半导体 | | | |
256Kx4Bit(withOE)High-SpeedCMOSStaticRAM(5.0VOperating). GENERALDESCRIPTION TheK6R1004C1Cisa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Cuses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate | SamsungSamsung Group 三星三星半导体 | | | |
256Kx4Bit(withOE)High-SpeedCMOSStaticRAM(5.0VOperating). GENERALDESCRIPTION TheK6R1004C1Cisa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Cuses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate | SamsungSamsung Group 三星三星半导体 | | | |
256Kx4Bit(withOE)High-SpeedCMOSStaticRAM(5.0VOperating). GENERALDESCRIPTION TheK6R1004C1Cisa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Cuses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate | SamsungSamsung Group 三星三星半导体 | | | |
256Kx4Bit(withOE)High-SpeedCMOSStaticRAM(5.0VOperating). GENERALDESCRIPTION TheK6R1004C1Cisa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Cuses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate | SamsungSamsung Group 三星三星半导体 | | | |
256Kx4Bit(withOE)High-SpeedCMOSStaticRAM(5.0VOperating). GENERALDESCRIPTION TheK6R1004C1Cisa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Cuses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate | SamsungSamsung Group 三星三星半导体 | | | |
256Kx4Bit(withOE)High-SpeedCMOSStaticRAM(5.0VOperating). GENERALDESCRIPTION TheK6R1004C1Cisa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Cuses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate | SamsungSamsung Group 三星三星半导体 | | | |
256Kx4Bit(withOE)High-SpeedCMOSStaticRAM(5.0VOperating). GENERALDESCRIPTION TheK6R1004C1Cisa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Cuses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate | SamsungSamsung Group 三星三星半导体 | | | |
256Kx4Bit(withOE)High-SpeedCMOSStaticRAM(5.0VOperating). GENERALDESCRIPTION TheK6R1004C1Cisa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Cuses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate | SamsungSamsung Group 三星三星半导体 | | | |
256Kx4Bit(withOE)High-SpeedCMOSStaticRAM(5.0VOperating). GENERALDESCRIPTION TheK6R1004C1Cisa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Cuses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate | SamsungSamsung Group 三星三星半导体 | | | |
256Kx4Bit(withOE)High-SpeedCMOSStaticRAM(5.0VOperating). GENERALDESCRIPTION TheK6R1004C1Cisa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Cuses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate | SamsungSamsung Group 三星三星半导体 | | | |
256Kx4Bit(withOE)High-SpeedCMOSStaticRAM(5.0VOperating). GENERALDESCRIPTION TheK6R1004C1Cisa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Cuses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate | SamsungSamsung Group 三星三星半导体 | | | |
256Kx4HighSpeedStaticRAM(5VOperating),RevolutionaryPinout GENERALDESCRIPTION TheK6R1004C1Aisa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Auses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica | SamsungSamsung Group 三星三星半导体 | | | |
256Kx4Bit(withOE)HighSpeedStaticRAM(5.0VOperating),RevolutionaryPinout GENERALDESCRIPTION TheK6R1004C1Bisa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Buses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica | SamsungSamsung Group 三星三星半导体 | | |
K6R1004C1C产品属性
- 类型
描述
- 型号
K6R1004C1C
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
256Kx4 Bit(with OE) High-Speed CMOS Static RAM(5.0V Operating).
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
04+ |
SOJ-32 |
25000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SAMSUNG |
23+ |
标准封装 |
18000 |
||||
Samsung/Samsung Group/三星/三 |
21+ |
SOJ-32 |
25000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
SAMSUNG |
23+ |
SOJ |
9365 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
|||
SAMSUNG |
9 |
公司优势库存 热卖中!! |
|||||
SAMSUNG |
22+ |
SOJ |
2679 |
原装优势!绝对公司现货!可长期供货! |
|||
SAMSUNG |
22+ |
6980 |
原装现货,可开13%税票 |
||||
SAMSUNG |
23+24 |
SOJ- |
9680 |
原盒原标.进口原装.支持实单 .价格优势 |
|||
SAMSUNG |
6000 |
面议 |
19 |
SOJ |
|||
SAMSUNG |
22+23+ |
SOJ |
24044 |
绝对原装正品现货,全新深圳原装进口现货 |
K6R1004C1C芯片相关品牌
K6R1004C1C规格书下载地址
K6R1004C1C参数引脚图相关
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- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- K7252M
- K7075P
- K7055
- K7045D2
- K7045D1
- K7045C
- K70150P
- K70100P
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- K700107
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- K700102
- K700101
- K70_V04
- K70_V03
- K70_V02
- K70_V01
- K6R1004C1D-JC(I)10
- K6R1004C1D
- K6R1004C1C-P15
- K6R1004C1C-P12
- K6R1004C1C-P10
- K6R1004C1C-P
- K6R1004C1C-L15
- K6R1004C1C-L12
- K6R1004C1C-L10
- K6R1004C1C-L
- K6R1004C1C-I20
- K6R1004C1C-I15
- K6R1004C1C-I12
- K6R1004C1C-I10
- K6R1004C1C-I
- K6R1004C1C-C20
- K6R1004C1C-C15
- K6R1004C1C-C12
- K6R1004C1C-C10
- K6R1004C1C-C
- K6R1004C1B-J8
- K6R1004C1B-J12
- K6R1004C1B-J10
- K6R1004C1B-C8
- K6R1004C1B-C12
- K6R1004C1B-C10
- K6R1004C1B-8
- K6R1004C1B-12
- K6R1004C1B-10
- K6R1004C1B
- K6R1004C1A-J20
- K6R1004C1A-J15
- K6R1004C1A-J12
- K6R1004C1A-C20
- K6R1004C1A-C15
- K6R1004C1A-C12
- K6R1004C1A-20
- K6R1004C1A-15
- K6R1004C1A-12
- K6R1004C1A
- K6A65D
- K-683
- K-682
- K-681
- K-680
- K6283K
- K6268K
- K6265K
- K6264K
- K60-500
- K60-375
- K60-300
- K60-250
- K60-200
- K60-185
- K60-160
- K60-135
- K60-090
- K60-075
- K60-065
K6R1004C1C数据表相关新闻
K521H12ACH-B050
K521H12ACH-B050HYNIX2020+BGA K524G2GACJ-B050SKHYNIX2020+BGA K521F57ACM-A060HYNIX2020+BGA K524F2HACA-B050SKHYNIX2020+BGA K521H12ACB-B060HYNIX2020+BGA K524G2GACI-BO50HYNIX2020+BGA K521F57ACC-B050000HYNIX2020+BGA PM8018HYNIX2020BGA PM8015SKHYNIX2020BGA EMMC08G-W325S
2021-5-26K5-1658UN-01
商品目录行程开关 电路结构SPST-NO 作用力20gf 额定电压DC12V(DC) 额定电流50mA(DC) 开关功能Off-Mom
2020-10-28K6R4016C1D-UI10 静态存储器芯片 进口原装现货。
K6R4016C1D-UI10 进口原装现货。
2020-10-20K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
2020-2-24K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
2020-1-1K521F13ACA-B060
K521F13ACA-B060
2019-11-4
DdatasheetPDF页码索引
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