型号 功能描述 生产厂家 企业 LOGO 操作
K6R1004C1A

256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out

GENERAL DESCRIPTION The K6R1004C1A is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1A uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

Samsung

三星

K6R1004C1A

256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out

Samsung

三星

256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out

GENERAL DESCRIPTION The K6R1004C1A is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1A uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

Samsung

三星

256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out

GENERAL DESCRIPTION The K6R1004C1A is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1A uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

Samsung

三星

256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out

GENERAL DESCRIPTION The K6R1004C1A is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1A uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

Samsung

三星

256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out

GENERAL DESCRIPTION The K6R1004C1A is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1A uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

Samsung

三星

256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out

GENERAL DESCRIPTION The K6R1004C1A is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1A uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

Samsung

三星

256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out

GENERAL DESCRIPTION The K6R1004C1A is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1A uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

Samsung

三星

256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out

GENERAL DESCRIPTION The K6R1004C1A is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1A uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

Samsung

三星

256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out

GENERAL DESCRIPTION The K6R1004C1A is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1A uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

Samsung

三星

256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out

GENERAL DESCRIPTION The K6R1004C1A is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1A uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

Samsung

三星

256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out

GENERAL DESCRIPTION The K6R1004C1B is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1B uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

Samsung

三星

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERAL DESCRIPTION The K6R1004C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1C uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

Samsung

三星

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERAL DESCRIPTION The K6R1004C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1C uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

Samsung

三星

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERAL DESCRIPTION The K6R1004C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1C uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

Samsung

三星

K6R1004C1A产品属性

  • 类型

    描述

  • 型号

    K6R1004C1A

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out

更新时间:2025-11-20 11:23:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG
25+
SOJ
2679
原装优势!绝对公司现货!可长期供货!
6000
面议
19
DIP/SMD
SAM
23+
SOP8
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
SAMSUNG
1923+
SOJ
3000
绝对进口原装现货
SAMSUNG/三星
23+
SOJ
50000
全新原装正品现货,支持订货
SAMSUNG
23+24
SOJ-
9680
原盒原标.进口原装.支持实单 .价格优势
SAMSUNG
25+23+
SOJ
24044
绝对原装正品现货,全新深圳原装进口现货
SAMSUNG
04+
SOJ-32
25000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SAMSUNG
2023+
原厂封装
50000
原装现货
SAMSUNG/三星
2450+
SOJ
9850
只做原厂原装正品现货或订货假一赔十!

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