型号 功能描述 生产厂家 企业 LOGO 操作

16M x16 Mobile DDR SDRAM

FEATURES • 1.8V power supply, 1.8V I/O power • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS Latency ( 3 ) - Burst Length ( 2

Samsung

三星

16M x16 Mobile DDR SDRAM

FEATURES • 1.8V power supply, 1.8V I/O power • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS Latency ( 3 ) - Burst Length ( 2

Samsung

三星

16M x16 Mobile DDR SDRAM

FEATURES • 1.8V power supply, 1.8V I/O power • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS Latency ( 3 ) - Burst Length ( 2

Samsung

三星

16M x16 Mobile-DDR SDRAM

FEATURES • 1.8V power supply, 1.8V I/O power • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS Latency ( 2, 3 ) - Burst Length

Samsung

三星

16Mx16 Mobile DDR SDRAM

FEATURES • VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS Latency ( 2, 3 ) - Burst Length ( 2, 4, 8, 16

Samsung

三星

16Mx16 Mobile DDR SDRAM

FEATURES • VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS Latency ( 2, 3 ) - Burst Length ( 2, 4, 8, 16

Samsung

三星

16Mx16 Mobile DDR SDRAM

FEATURES • VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS Latency ( 2, 3 ) - Burst Length ( 2, 4, 8, 16

Samsung

三星

16Mx16 Mobile DDR SDRAM

FEATURES • VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS Latency ( 2, 3 ) - Burst Length ( 2, 4, 8, 16

Samsung

三星

16Mx16 Mobile DDR SDRAM

FEATURES • VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS Latency ( 2, 3 ) - Burst Length ( 2, 4, 8, 16

Samsung

三星

16M x16 Mobile DDR SDRAM

Samsung

三星

16Mx16 Mobile DDR SDRAM

Samsung

三星

K4X56163产品属性

  • 类型

    描述

  • 型号

    K4X56163

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    16M x16 Mobile DDR SDRAM

更新时间:2026-1-3 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SEC
24+
NA/
130
优势代理渠道,原装正品,可全系列订货开增值税票
SAMSUNG
24+
BGA
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
SAMSUNG
25+23+
BGA
32555
绝对原装正品全新进口深圳现货
SAMSUNG
22+
BGA
8000
原装正品支持实单
K4X56163PE-LGC2
25+
90
90
SAMSUNG
6200
BGA
17
100%原装正品现货
SAMSUNG
23+
BGA
5000
原装正品,假一罚十
SEC
24+
BGA
1830
SAMSUNG
BGA
68500
一级代理 原装正品假一罚十价格优势长期供货
SAMSUNG/三星
2447
BGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货

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