型号 功能描述 生产厂家 企业 LOGO 操作
K4T51163QG-HCLCC

512Mb G-die DDR2 SDRAM Specification

The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4banks or 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. Key Features • JEDEC stan

Samsung

三星

512Mb B-die DDR2 SDRAM

DDR2 SDRAM The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4banks, 16Mbit x 8 I/Os x 4 banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 533Mb/sec/pin (DDR2-533) for general applications. The chip

Samsung

三星

512Mb B-die DDR2 SDRAM

DDR2 SDRAM The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4banks, 16Mbit x 8 I/Os x 4 banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 533Mb/sec/pin (DDR2-533) for general applications. The chip

Samsung

三星

512Mb B-die DDR2 SDRAM

DDR2 SDRAM The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4banks, 16Mbit x 8 I/Os x 4 banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 533Mb/sec/pin (DDR2-533) for general applications. The chip

Samsung

三星

512Mb C-die DDR2 SDRAM

The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply wi

Samsung

三星

512Mb C-die DDR2 SDRAM

The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply wi

Samsung

三星

K4T51163QG-HCLCC产品属性

  • 类型

    描述

  • 型号

    K4T51163QG-HCLCC

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    512Mb G-die DDR2 SDRAM Specification

更新时间:2025-9-25 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG/三星
24+
NA/
970
优势代理渠道,原装正品,可全系列订货开增值税票
SAMSUNG
11+
FBGA84
2000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SAMSUNG
23+
BGA
30000
代理原装现货,价格优势
SAMSUNG/三星
原厂封装
9800
原装进口公司现货假一赔百
SAMSUNG
24+
BGA
8000
新到现货,只做全新原装正品
-
23+
NA
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
SAMSUNG
25+
标准封装
18000
原厂直接发货进口原装
SAMSUNG
22+
BGA
8000
原装正品支持实单
SAMSUNG
10+
BGA
845
原装现货海量库存欢迎咨询
SAMSUNG
24+
BGA
5000
全新原装正品,现货销售

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