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K4T51043Q价格
参考价格:¥93.8242
型号:K4T51043QB-ZCD5 品牌:Samsung 备注:这里有K4T51043Q多少钱,2025年最近7天走势,今日出价,今日竞价,K4T51043Q批发/采购报价,K4T51043Q行情走势销售排行榜,K4T51043Q报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
K4T51043Q | 512Mb B-die DDR2 SDRAM DDR2 SDRAM The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4banks, 16Mbit x 8 I/Os x 4 banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 533Mb/sec/pin (DDR2-533) for general applications. The chip | Samsung 三星 | ||
512Mb B-die DDR2 SDRAM DDR2 SDRAM The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4banks, 16Mbit x 8 I/Os x 4 banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 533Mb/sec/pin (DDR2-533) for general applications. The chip | Samsung 三星 | |||
512Mb B-die DDR2 SDRAM DDR2 SDRAM The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4banks, 16Mbit x 8 I/Os x 4 banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 533Mb/sec/pin (DDR2-533) for general applications. The chip | Samsung 三星 | |||
512Mb B-die DDR2 SDRAM DDR2 SDRAM The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4banks, 16Mbit x 8 I/Os x 4 banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 533Mb/sec/pin (DDR2-533) for general applications. The chip | Samsung 三星 | |||
512Mb B-die DDR2 SDRAM DDR2 SDRAM The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4banks, 16Mbit x 8 I/Os x 4 banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 533Mb/sec/pin (DDR2-533) for general applications. The chip | Samsung 三星 | |||
512Mb C-die DDR2 SDRAM The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply wi | Samsung 三星 | |||
512Mb C-die DDR2 SDRAM The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply wi | Samsung 三星 | |||
512Mb C-die DDR2 SDRAM The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply wi | Samsung 三星 | |||
512Mb C-die DDR2 SDRAM The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply wi | Samsung 三星 | |||
512Mb C-die DDR2 SDRAM The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply wi | Samsung 三星 | |||
512Mb C-die DDR2 SDRAM The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply wi | Samsung 三星 | |||
512Mb C-die DDR2 SDRAM The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply wi | Samsung 三星 | |||
512Mb C-die DDR2 SDRAM The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply wi | Samsung 三星 | |||
512Mb C-die DDR2 SDRAM The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply wi | Samsung 三星 | |||
512Mb C-die DDR2 SDRAM The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply wi | Samsung 三星 | |||
512Mb C-die DDR2 SDRAM The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply wi | Samsung 三星 | |||
512Mb C-die DDR2 SDRAM The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply wi | Samsung 三星 | |||
512Mb C-die DDR2 SDRAM The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply wi | Samsung 三星 | |||
512Mb E-die DDR2 SDRAM Specification The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply | Samsung 三星 | |||
512Mb G-die DDR2 SDRAM Specification The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4banks or 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. Key Features • JEDEC stan | Samsung 三星 | |||
512Mb G-die DDR2 SDRAM Specification The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4banks or 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. Key Features • JEDEC stan | Samsung 三星 | |||
512Mb G-die DDR2 SDRAM Specification The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4banks or 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. Key Features • JEDEC stan | Samsung 三星 | |||
512Mb G-die DDR2 SDRAM Specification The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4banks or 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. Key Features • JEDEC stan | Samsung 三星 | |||
512Mb G-die DDR2 SDRAM Specification The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4banks or 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. Key Features • JEDEC stan | Samsung 三星 | |||
512Mb G-die DDR2 SDRAM Specification The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4banks or 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. Key Features • JEDEC stan | Samsung 三星 | |||
DDR2 SDRAM Memory Consumer Memory | Samsung 三星 | |||
Consumer Memory SDRAM Product Guide Memory Division November 2007 | Samsung 三星 |
K4T51043Q产品属性
- 类型
描述
- 型号
K4T51043Q
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
512Mb B-die DDR2 SDRAM
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SAMSUNG |
24+ |
BGA |
23000 |
免费送样原盒原包现货一手渠道联系 |
|||
SPANSION/飞索半导体 |
24+ |
QFN |
60000 |
全新原装现货 |
|||
SAMSUNG/三星 |
24+ |
NA/ |
3270 |
原装现货,当天可交货,原型号开票 |
|||
SAMSUNG/三星 |
25+ |
FBGA |
996880 |
只做原装,欢迎来电资询 |
|||
SAMSUNG/三星 |
2402+ |
BGA |
8324 |
原装正品!实单价优! |
|||
SAMSUNG |
16+ |
BGA |
4000 |
进口原装现货/价格优势! |
|||
SPANSION |
22+ |
QFN |
25000 |
只有原装原装,支持BOM配单 |
|||
SAMSUNG |
2020+ |
BGA |
5600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
SAMSUNG |
21+ |
FBGA |
12588 |
原装正品,自己库存 假一罚十 |
|||
N/A |
23+ |
NA |
6500 |
全新原装假一赔十 |
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K4T51043Q规格书下载地址
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K4T51043Q数据表相关新闻
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2024-1-25K4T1G164QG-BCE7 进口原装,主营军工级IC
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2020-7-14K4T1G164QJ-BCE7
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2020-4-28K4T51163QQ-BPE70CV
TAPE ON REEL / SRAM-PSEUDO / 2MX16 PSEUDO / PW751 BGA CODE 48 BALL 6 X 8 / VFBGA-48 / 70 NS / -40°~+85°C(IND) / RoHS / 1.70-1.95V / TAPE ON REEL / EOL / 1000 PCS
2019-12-10K4T1G084QJ-BCE7
K4T1G084QJ-BCE7
2019-10-28K4X51163PK-FGD8原装现货
瀚佳科技 专业一站式全套配单服务 联系电话0755-23140719/15323480719(微信同号)
2019-1-7
DdatasheetPDF页码索引
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