型号 功能描述 生产厂家&企业 LOGO 操作
K4T1G164QQ

1Gb Q-die DDR2 SDRAM Specification

The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. Key Features • JEDEC standard

SamsungSamsung semiconductor

三星三星半导体

Samsung

1Gb Q-die DDR2 SDRAM Specification

The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. Key Features • JEDEC standard

SamsungSamsung semiconductor

三星三星半导体

Samsung

1Gb Q-die DDR2 SDRAM Specification

The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. Key Features • JEDEC standard

SamsungSamsung semiconductor

三星三星半导体

Samsung

1Gb Q-die DDR2 SDRAM Specification

The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. Key Features • JEDEC standard

SamsungSamsung semiconductor

三星三星半导体

Samsung

1Gb Q-die DDR2 SDRAM Specification

The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. Key Features • JEDEC standard

SamsungSamsung semiconductor

三星三星半导体

Samsung

1Gb Q-die DDR2 SDRAM Specification

The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. Key Features • JEDEC standard

SamsungSamsung semiconductor

三星三星半导体

Samsung

1Gb Q-die DDR2 SDRAM Specification

The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. Key Features • JEDEC standard

SamsungSamsung semiconductor

三星三星半导体

Samsung

1Gb D-die DDR2 SDRAM Specification

The 1Gb DDR2 SDRAM is organized as a 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 S

SamsungSamsung semiconductor

三星三星半导体

Samsung

Consumer Memory

SDRAM Product Guide Memory Division November 2007

SamsungSamsung semiconductor

三星三星半导体

Samsung

Consumer Memory

SDRAM Product Guide Memory Division November 2007

SamsungSamsung semiconductor

三星三星半导体

Samsung

1Gb F-die DDR2 SDRAM

1Gb F-die DDR2 SDRAM 60FBGA/84FBGA with Lead-Free & Halogen-Free (RoHS compliant) The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 8

SamsungSamsung semiconductor

三星三星半导体

Samsung

PRODUCT SELECTION GUIDE Displays, Memory and Storage

Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon

SamsungSamsung semiconductor

三星三星半导体

Samsung

K4T1G164QQ产品属性

  • 类型

    描述

  • 型号

    K4T1G164QQ

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    1Gb Q-die DDR2 SDRAM Specification

更新时间:2025-8-5 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG/三星
25+
BGA
32000
SAMSUNG/三星全新特价K4T1G164QQ-HCE6即刻询购立享优惠#长期有货
SAMSUNG
23+
BGA
3500
全新原装假一赔十
SAMSUNG
24+
BGA
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
SAMSUNG/三星
21+
BGA
6000
十年专营,原装现货,假一赔十
SAMSUNG
2430+
BGA
8540
只做原装正品假一赔十为客户做到零风险!!
SAMSUNG
23+
BGA
2500
绝对全新原装!优势供货渠道!特价!请放心订购!
SAMSUNG/三星
24+
BGA
20000
不忘初芯-只做原装正品
SAMSUNG
21+
FBGA-84
11233
全新原装SAMSUNG内存全系列正品现货,假一赔十!公司为一般纳税人可开17%增值税票!请放心采购! 0755-82797778 13692179527 张小姐期待你的来电!!
SAMSUNG/三星
23+
FBGA-84
25000
全新原装现货,假一赔十
SAMSUNG/三
23+
BGA
220
原装现货

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