位置:首页 > IC中文资料第5694页 > K4T1G164QQ
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
K4T1G164QQ | 1Gb Q-die DDR2 SDRAM Specification The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. Key Features • JEDEC standard | SamsungSamsung semiconductor 三星三星半导体 | ||
1Gb Q-die DDR2 SDRAM Specification The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. Key Features • JEDEC standard | SamsungSamsung semiconductor 三星三星半导体 | |||
1Gb Q-die DDR2 SDRAM Specification The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. Key Features • JEDEC standard | SamsungSamsung semiconductor 三星三星半导体 | |||
1Gb Q-die DDR2 SDRAM Specification The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. Key Features • JEDEC standard | SamsungSamsung semiconductor 三星三星半导体 | |||
1Gb Q-die DDR2 SDRAM Specification The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. Key Features • JEDEC standard | SamsungSamsung semiconductor 三星三星半导体 | |||
1Gb Q-die DDR2 SDRAM Specification The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. Key Features • JEDEC standard | SamsungSamsung semiconductor 三星三星半导体 | |||
1Gb Q-die DDR2 SDRAM Specification The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. Key Features • JEDEC standard | SamsungSamsung semiconductor 三星三星半导体 | |||
1Gb D-die DDR2 SDRAM Specification The 1Gb DDR2 SDRAM is organized as a 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 S | SamsungSamsung semiconductor 三星三星半导体 | |||
Consumer Memory SDRAM Product Guide Memory Division November 2007 | SamsungSamsung semiconductor 三星三星半导体 | |||
Consumer Memory SDRAM Product Guide Memory Division November 2007 | SamsungSamsung semiconductor 三星三星半导体 | |||
1Gb F-die DDR2 SDRAM 1Gb F-die DDR2 SDRAM 60FBGA/84FBGA with Lead-Free & Halogen-Free (RoHS compliant) The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 8 | SamsungSamsung semiconductor 三星三星半导体 | |||
PRODUCT SELECTION GUIDE Displays, Memory and Storage Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon | SamsungSamsung semiconductor 三星三星半导体 |
K4T1G164QQ产品属性
- 类型
描述
- 型号
K4T1G164QQ
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
1Gb Q-die DDR2 SDRAM Specification
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
25+ |
BGA |
32000 |
SAMSUNG/三星全新特价K4T1G164QQ-HCE6即刻询购立享优惠#长期有货 |
|||
SAMSUNG |
23+ |
BGA |
3500 |
全新原装假一赔十 |
|||
SAMSUNG |
24+ |
BGA |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
|||
SAMSUNG/三星 |
21+ |
BGA |
6000 |
十年专营,原装现货,假一赔十 |
|||
SAMSUNG |
2430+ |
BGA |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
SAMSUNG |
23+ |
BGA |
2500 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
|||
SAMSUNG/三星 |
24+ |
BGA |
20000 |
不忘初芯-只做原装正品 |
|||
SAMSUNG |
21+ |
FBGA-84 |
11233 |
全新原装SAMSUNG内存全系列正品现货,假一赔十!公司为一般纳税人可开17%增值税票!请放心采购!
0755-82797778 13692179527 张小姐期待你的来电!!
|
|||
SAMSUNG/三星 |
23+ |
FBGA-84 |
25000 |
全新原装现货,假一赔十 |
|||
SAMSUNG/三 |
23+ |
BGA |
220 |
原装现货 |
K4T1G164QQ规格书下载地址
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K4T1G164QQ数据表相关新闻
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2024-1-25K4T1G164QG-BCE7 进口原装,主营军工级IC
K4T1G164QG-BCE7 SAMSUNG,ALTERA(阿尔特拉), ADI亚德诺,军工级IC专业优势渠道
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TAPE ON REEL / SRAM-PSEUDO / 2MX16 PSEUDO / PW751 BGA CODE 48 BALL 6 X 8 / VFBGA-48 / 70 NS / -40°~+85°C(IND) / RoHS / 1.70-1.95V / TAPE ON REEL / EOL / 1000 PCS
2019-12-10K4T1G084QJ-BCE7
K4T1G084QJ-BCE7
2019-10-28K4X51163PK-FGD8原装现货
瀚佳科技 专业一站式全套配单服务 联系电话0755-23140719/15323480719(微信同号)
2019-1-7
DdatasheetPDF页码索引
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