型号 功能描述 生产厂家&企业 LOGO 操作
K4T1G164QE

Consumer Memory

SDRAM Product Guide Memory Division November 2007

Samsung

三星

1Gb E-die DDR2 SDRAM 60FBGA/84FBGA with Lead-Free & Halogen-Free (RoHS compliant)

1Gb E-die DDR2 SDRAM 60FBGA/84FBGA with Lead-Free & Halogen-Free (RoHS compliant) The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 8

Samsung

三星

1Gb E-die DDR2 SDRAM

The 1Gb DDR2 SDRAM is organized asa 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. Key Features • JEDEC standard VDD= 1

Samsung

三星

1Gb E-die DDR2 SDRAM

The 1Gb DDR2 SDRAM is organized asa 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. Key Features • JEDEC standard VDD= 1

Samsung

三星

1Gb E-die DDR2 SDRAM

The 1Gb DDR2 SDRAM is organized asa 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. Key Features • JEDEC standard VDD= 1

Samsung

三星

1Gb D-die DDR2 SDRAM Specification

The 1Gb DDR2 SDRAM is organized as a 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 S

Samsung

三星

Consumer Memory

SDRAM Product Guide Memory Division November 2007

Samsung

三星

1Gb F-die DDR2 SDRAM

1Gb F-die DDR2 SDRAM 60FBGA/84FBGA with Lead-Free & Halogen-Free (RoHS compliant) The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 8

Samsung

三星

PRODUCT SELECTION GUIDE Displays, Memory and Storage

Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon

Samsung

三星

K4T1G164QE产品属性

  • 类型

    描述

  • 型号

    K4T1G164QE

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    Consumer Memory

更新时间:2025-8-8 23:16:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG/三星
24+
TSOP
13718
只做原装 公司现货库存
SAMSUNG
23+
BGA
20000
全新原装假一赔十
SAMSUNG/三星
25+
BGA
996880
只做原装,欢迎来电资询
SAMSUNG
08PB
BGA
2245
全新原装进口自己库存优势
SAMSUNG
存储器
BGA
40337
SAMSUNG存储芯片K4T1G164QE-HIF7即刻询购立享优惠#长期有货
SAMSUNG
24+
FBGA84
2568
原装优势!绝对公司现货
SAMSUNG/三星
21+
BGA
9800
只做原装正品假一赔十!正规渠道订货!
SUMSUNG
24+
BGA
23000
免费送样原盒原包现货一手渠道联系
SAMSUNG/三星
23+
BGA
30000
全新原装现货,假一赔十.
SAMSUNG(三星)
24+
N/A
27048
原厂可订货,技术支持,直接渠道。可签保供合同

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