64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S640832E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

2M x 8Bit x 4 Banks Synchronous DRAM Data Sheet

64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S640832E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S640832E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S640832E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S640832E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S640832E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S640832E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S640832C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S640832D is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S640832F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

64Mb K-die SDRAM

GENERAL DESCRIPTION The K4S640832K / K4S641632K is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with