2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S160822D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

1M x 8bit x 2 Banks Synchronous DRAM LVTTL

2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S160822D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S160822D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S160822D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S160822D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S160822D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S160822D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S160822D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S160822D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S160822D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S160822D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po