您好,欢迎来到114ic资料网！

芯片资料
  • 芯片资料
  • 库存查询
  • 行业新闻
  • 生产厂家
  • 替换型号
  • 晶体管

位置：首页 > IC中文资料第6166页 > K4H561638

型号 功能描述 生产厂家&企业 LOGO 操作
K4H561638A-TCA0

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638A-TCA2

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638A-TCB0

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638A-TLA0

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638A-TLA2

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638A-TLB0

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638B-TCA0

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638B-TCA2

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638B-TCB0

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638B-TLA0

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638B-TLA2

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638B-TLB0

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638C-TCA0

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638C-TCA2

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638C-TCB0

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638C-TLA0

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638C-TLA2

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638C-TLB0

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638D-TCA0

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638D-TCA2

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638D-TCB0

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638D-TLA0

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638D-TLA2

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638D-TLB0

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638E-TCA0

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638E-TCA2

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638E-TCB0

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638E-TLA0

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638E-TLA2

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638E-TLB0

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638H

DDRSDRAMProductGuide

ConsumerMemory

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638J

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638J

DDRSDRAMProductGuide

ConsumerMemory

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638J

256MbJ-dieDDRSDRAMSpecification

ConsumerMemory

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638J-LC/LB3

256MbJ-dieDDRSDRAMSpecification

ConsumerMemory

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638J-LC/LCC

256MbJ-dieDDRSDRAMSpecification

ConsumerMemory

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638M-TCA0

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638M-TCA2

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638M-TCB0

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638M-TLA0

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638M-TLA2

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638M-TLB0

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638N

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638D-GCA2

DDR256Mb

文件：291.04 Kbytes Page：26 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638D-GCB0

DDR256Mb

文件：291.04 Kbytes Page：26 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638D-GCB3

DDR256Mb

文件：291.04 Kbytes Page：26 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638D-GLA2

DDR256Mb

文件：291.04 Kbytes Page：26 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638D-GLB0

DDR256Mb

文件：291.04 Kbytes Page：26 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638D-GLB3

DDR256Mb

文件：291.04 Kbytes Page：26 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638D-TC/LA0

256Mb

文件：235.33 Kbytes Page：25 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638D-TC/LA2

256Mb

文件：235.33 Kbytes Page：25 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638D-TC/LB0

256Mb

文件：235.33 Kbytes Page：25 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638D-TC/LB3

256Mb

文件：235.33 Kbytes Page：25 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638D-TCC4

256MbD-dieDDR400SDRAMSpecification

文件：168.54 Kbytes Page：18 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638D-TCCC

256MbD-dieDDR400SDRAMSpecification

文件：168.54 Kbytes Page：18 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638F

256MbF-dieDDRSDRAMSpecification

文件：329.93 Kbytes Page：23 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638F-TC/LA2

256MbF-dieDDRSDRAMSpecification

文件：329.93 Kbytes Page：23 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638F-TC/LAA

256MbF-dieDDRSDRAMSpecification

文件：329.93 Kbytes Page：23 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638F-TC/LB0

256MbF-dieDDRSDRAMSpecification

文件：329.93 Kbytes Page：23 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4H561638F-TC/LB3

256MbF-dieDDRSDRAMSpecification

文件：329.93 Kbytes Page：23 Pages

SamsungSamsung Group

三星三星半导体

Samsung

K4H561638产品属性

  • 类型

    描述

  • 型号

    K4H561638

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    128Mb DDR SDRAM

K4H561638供应商更多...

更新时间：2024-6-22 11:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市亿联芯电子科技有限公司
K4H561638B-TCBO
SAMSUNG/三星
2023+
TSOP-56
6893
专注全新正品,优势现货供应
询价
深圳市纳艾斯科技有限公司
K4H561638B-TCBO
SAMSUNG
2020+
TSOP-56
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
贸泽芯城（深圳）电子科技有限公司
K4H561638B-TCB0
SAMSUNG/三星
TSOP-66
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
深圳宇航军工半导体有限公司
K4H561638B-TCBO
SAMSANG
19+
TSOP-56
256800
原厂代理渠道,每一颗芯片都可追溯原厂；
询价
深圳市华斯顿科技有限公司
K4H561638B-TCB0
SAMSUNG
22+23+
TSSOP
37577
绝对原装正品全新进口深圳现货
询价
深圳市辰德隆电子科技有限公司
K4H561638B-TCB0
SAMSUNG/三星
23+
TSOP
6000
只有原装正品,老板发话合适就出
询价
艾睿国际（香港）有限公司
K4H561638B-TCBO
SAMSUNG/三星
2021+
TSOP-56
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
深圳市威尔健半导体有限公司
K4H561638B-TCBO
SAMSUNG/三星
23+
TSOP-56
50000
全新原装正品现货,支持订货
询价
深圳市振鑫微电子科技有限公司
K4H561638B-TCBO
SAMSUNG(三星)
23+
N/A
589610
新到现货 原厂一手货源 价格秒杀代理!
询价
深圳市威雅利发展有限公司
K4H561638B-TCB0
SAMSUNG
12+
TSOP
6
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价

K4H561638芯片相关品牌

  • API
  • APITECH
  • BOARDCOM
  • crydom
  • Hitachi
  • IDT
  • LUGUANG
  • MOLEX4
  • NEC
  • POWEREX
  • SILABS
  • SUPERWORLD

K4H561638规格书下载地址

K4H561638参数引脚图相关

K4H561638数据表相关新闻

DdatasheetPDF页码索引

新数据|IC资料索引|IC关键词|IC库存|IC中文资料|关于我们|联系我们

Copyright © 2003-2024 www.114ic.cn All Rights Reserved 网站备案: 粤ICP备05011613号 粤公网安备 44030402000933号

声明：本站所有资料均来自互联网及网友提供，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权请联系QQ：303638005，本站马上更正

字母索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

深圳市市场监督管理局企业主体身份公示