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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
512MbC-dieDDRSDRAMSpecification 文件：212.57 Kbytes Page：24 Pages | SamsungSamsung Group 三星三星半导体 |  |   | |
512MbB-dieDDRSDRAMSpecification KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl | SamsungSamsung Group 三星三星半导体 | | | |
512MbB-dieDDRSDRAMSpecification KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl | SamsungSamsung Group 三星三星半导体 | | | |
512MbB-dieDDRSDRAMSpecification 文件：392.89 Kbytes Page：24 Pages | SamsungSamsung Group 三星三星半导体 | | | |
512MbB-dieDDRSDRAMSpecification 文件：392.89 Kbytes Page：24 Pages | SamsungSamsung Group 三星三星半导体 | | |
K4H511638J-LCCC产品属性
- 类型
描述
- 型号
K4H511638J-LCCC
- 制造商
Samsung Semiconductor
- 制造商
Samsung Semiconductor
- 功能描述
512 DDR SDRAM X16 - Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
21+ |
TSOP66 |
9800 |
只做原装正品假一赔十!正规渠道订货! |
|||
SAMSUNG |
23+ |
TSOP66 |
40443 |
SAMSUNG原装存储芯片-诚信为本 |
|||
SAMSUNG/三星 |
21+ |
TSSOP |
5000 |
十年专营,原装现货,假一赔十 |
|||
SAMSUNG |
08+ |
ROHS |
12 |
全新原装!优势库存热卖中! |
|||
K4H511638G-L |
23+ |
5000 |
原装现货 本公司为一般纳税人,可开17%增值税票 |
||||
SAMSUNG |
21+ |
TSOP66 |
5000 |
全新原装 鄙视假货15118075546 |
|||
SAMSUNG |
2011+ |
TSOP |
1920 |
原包原装现货,专注ARM内存闪存等芯片 |
|||
SAMSUNG/三星 |
08+ |
TSOP |
10 |
只做正品,原装现货实单来谈 |
|||
SAMSUNG/三星 |
23+ |
TSOP |
5500 |
主营品牌深圳百分百原装现货假一罚十绝对价优 |
|||
SAMSUNG |
19+ |
TSOP66 |
36500 |
一级代理/全新现货/长期供应!! |
K4H511638J-LCCC芯片相关品牌
K4H511638J-LCCC规格书下载地址
K4H511638J-LCCC参数引脚图相关
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K4H511638J-LCCC数据表相关新闻
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DdatasheetPDF页码索引
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