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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
512MbC-dieDDRSDRAMSpecification 文件：212.57 Kbytes Page：24 Pages | SamsungSamsung Group 三星三星半导体 |  |   | |
512MbB-dieDDRSDRAMSpecification KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl | SamsungSamsung Group 三星三星半导体 | | | |
512MbB-dieDDRSDRAMSpecification KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl | SamsungSamsung Group 三星三星半导体 | | | |
512MbB-dieDDRSDRAMSpecification 文件：392.89 Kbytes Page：24 Pages | SamsungSamsung Group 三星三星半导体 | | | |
512MbB-dieDDRSDRAMSpecification 文件：392.89 Kbytes Page：24 Pages | SamsungSamsung Group 三星三星半导体 | | |
K4H511638G-LCCCT产品属性
- 类型
描述
- 型号
K4H511638G-LCCCT
- 制造商
Samsung SDI
- 功能描述
DRAM Chip DDR SDRAM 512M-Bit 32Mx16 2.6V 66-Pin TSSOP-II T/R
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
10000 |
2012 |
|||||
SAMSUNG |
2016+ |
TSOP |
5000 |
全新原装现货,只售原装,假一赔十! |
|||
SAMSUNG/三星 |
23+ |
TSOP-66 |
21356 |
全新原装现货特价销售,欢迎来电查询 |
|||
SAMSUNG |
21+ |
TSOP66 |
5000 |
全新原装 鄙视假货15118075546 |
|||
21+ |
TSOP-54 |
54000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
||||
SAMSUNG/三星 |
21+ |
TSOP |
10000 |
全新原装 公司现货 价优 |
|||
SAMSUNG/三星 |
23+ |
TSOP-66 |
25000 |
全新原装现货,假一赔十 |
|||
SAMSUNG |
23+ |
TSOP66 |
40443 |
SAMSUNG原装存储芯片-诚信为本 |
|||
23+ |
TSOP66 |
19714 |
专注原装正品现货特价中量大可定 |
||||
SAMSUNG/三星 |
08+ |
TSOP |
10 |
只做正品,原装现货实单来谈 |
K4H511638G-LCCCT芯片相关品牌
K4H511638G-LCCCT规格书下载地址
K4H511638G-LCCCT参数引脚图相关
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DdatasheetPDF页码索引
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