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512MbC-dieDDRSDRAMSpecification

文件:212.57 Kbytes Page:24 Pages

SamsungSamsung Group

三星三星半导体

Samsung

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung

512MbC-dieDDRSDRAMSpecification

文件:212.57 Kbytes Page:24 Pages

SamsungSamsung Group

三星三星半导体

Samsung

512MbC-dieDDRSDRAMSpecification

文件:212.57 Kbytes Page:24 Pages

SamsungSamsung Group

三星三星半导体

Samsung

512MbC-dieDDRSDRAMSpecification

文件:212.57 Kbytes Page:24 Pages

SamsungSamsung Group

三星三星半导体

Samsung

512MbC-dieDDRSDRAMSpecification

文件:212.57 Kbytes Page:24 Pages

SamsungSamsung Group

三星三星半导体

Samsung

512MbC-dieDDRSDRAMSpecification

文件:212.57 Kbytes Page:24 Pages

SamsungSamsung Group

三星三星半导体

Samsung

512MbC-dieDDRSDRAMSpecification

文件:212.57 Kbytes Page:24 Pages

SamsungSamsung Group

三星三星半导体

Samsung

512MbC-dieDDRSDRAMSpecification

文件:212.57 Kbytes Page:24 Pages

SamsungSamsung Group

三星三星半导体

Samsung

512MbC-dieDDRSDRAMSpecification

文件:212.57 Kbytes Page:24 Pages

SamsungSamsung Group

三星三星半导体

Samsung

512MbC-dieDDRSDRAMSpecification

文件:212.57 Kbytes Page:24 Pages

SamsungSamsung Group

三星三星半导体

Samsung

512MbC-dieDDRSDRAMSpecification

文件:391.14 Kbytes Page:24 Pages

SamsungSamsung Group

三星三星半导体

Samsung

512MbC-dieDDRSDRAMSpecification

文件:391.14 Kbytes Page:24 Pages

SamsungSamsung Group

三星三星半导体

Samsung

512MbC-dieDDRSDRAMSpecification

文件:391.14 Kbytes Page:24 Pages

SamsungSamsung Group

三星三星半导体

Samsung

512MbC-dieDDRSDRAMSpecification

文件:391.14 Kbytes Page:24 Pages

SamsungSamsung Group

三星三星半导体

Samsung

512MbC-dieDDRSDRAMSpecification

文件:391.14 Kbytes Page:24 Pages

SamsungSamsung Group

三星三星半导体

Samsung

512MbB-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl

SamsungSamsung Group

三星三星半导体

Samsung

512MbB-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl

SamsungSamsung Group

三星三星半导体

Samsung

512MbB-dieDDRSDRAMSpecification

文件:392.89 Kbytes Page:24 Pages

SamsungSamsung Group

三星三星半导体

Samsung

512MbB-dieDDRSDRAMSpecification

文件:392.89 Kbytes Page:24 Pages

SamsungSamsung Group

三星三星半导体

Samsung

K4H511638C产品属性

  • 类型

    描述

  • 型号

    K4H511638C

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    128Mb DDR SDRAM

更新时间:2024-6-24 8:22:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG
22+
31
代理分销现货假一罚十
SAMSUNG
10000
2012
SAMSUNG
20+
TSSOPPB
2860
原厂原装正品价格优惠公司现货欢迎查询
SAMSUNG
存储器
TSOP66
40443
SAMSUNG原装存储芯片-诚信为本
Samsung
21+
TSSOP66
4800
原装现货,欢迎查询!
SAMSUNG
2016+
TSOP
5000
全新原装现货,只售原装,假一赔十!
SAMSUNG
19+
TSOP66
36500
一级代理/全新现货/长期供应!!
SAMSUNG/三星
08+
TSOP
10
只做正品,原装现货实单来谈
SAMSUNG/三星
2024+实力库存
TSOP66
55
只做原厂渠道 可追溯货源
SAMSUNG(三星)
23+
N/A
589610
新到现货 原厂一手货源 价格秒杀代理!

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