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K4H511638B-TC价格
参考价格：￥149.8562
型号：K4H511638B-TCCC000 品牌：Samsung 备注：这里有K4H511638B-TC多少钱，2024年最近7天走势，今日出价，今日竞价，K4H511638B-TC批发/采购报价，K4H511638B-TC行情走势销售排行榜，K4H511638B-TC报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
512MbC-dieDDRSDRAMSpecification 文件：212.57 Kbytes Page：24 Pages | SamsungSamsung semiconductor 三星三星半导体 |  |   | |
512MbB-dieDDRSDRAMSpecification KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl | SamsungSamsung semiconductor 三星三星半导体 | | | |
512MbB-dieDDRSDRAMSpecification KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl | SamsungSamsung semiconductor 三星三星半导体 | | | |
512MbB-dieDDRSDRAMSpecification KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl | SamsungSamsung semiconductor 三星三星半导体 | | | |
512MbB-dieDDRSDRAMSpecification KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl | SamsungSamsung semiconductor 三星三星半导体 | | | |
128MbDDRSDRAM Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5( | SamsungSamsung semiconductor 三星三星半导体 | | | |
128MbDDRSDRAM Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5( | SamsungSamsung semiconductor 三星三星半导体 | | | |
128MbDDRSDRAM Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5( | SamsungSamsung semiconductor 三星三星半导体 | | | |
512MbB-dieDDRSDRAMSpecification KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl | SamsungSamsung semiconductor 三星三星半导体 | | | |
512MbB-dieDDRSDRAMSpecification 文件：392.89 Kbytes Page：24 Pages | SamsungSamsung semiconductor 三星三星半导体 | | | |
512MbB-dieDDRSDRAMSpecification 文件：392.89 Kbytes Page：24 Pages | SamsungSamsung semiconductor 三星三星半导体 | | |
K4H511638B-TC产品属性
- 类型
描述
- 型号
K4H511638B-TC
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
512Mb B-die DDR SDRAM Specification
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
2016+ |
TSOP |
5000 |
全新原装现货,只售原装,假一赔十! |
|||
K4H511638G-L |
23+ |
5000 |
原装现货 本公司为一般纳税人,可开17%增值税票 |
||||
SAMSUNG/三星 |
2022+ |
TSOP |
13200 |
原厂原盒 原标现货 诚心经营 终身质保 |
|||
SAMSUNG |
23+ |
BGA |
20000 |
全新原装热卖/假一罚十!更多数量可订货 |
|||
SAMSUNG/三星 |
23+ |
TSOP |
5500 |
主营品牌深圳百分百原装现货假一罚十绝对价优 |
|||
SAMSUNG(三星) |
23+ |
N/A |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
|||
SAMSUNG |
2011+ |
TSOP |
1920 |
原包原装现货,专注ARM内存闪存等芯片 |
|||
SAMSUNG/三星 |
21+ |
BGA |
5120 |
全新原装现货 |
|||
SAMSUNG/三星 |
FBGA60 |
货真价实,假一罚十 |
25000 |
||||
Samsung |
23+ |
TSOP |
16800 |
进口原装现货 |
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K4H511638B-TC规格书下载地址
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DdatasheetPDF页码索引
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