型号 功能描述 生产厂家 企业 LOGO 操作
K4E660412E

16M x 4bit CMOS Dynamic RAM with Extended Data Out

This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor mal or Low power) are optional features of t

Samsung

三星

16M x 4bit CMOS Dynamic RAM with Extended Data Out

This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor mal or Low power) are optional features of t

Samsung

三星

16M x 4bit CMOS Dynamic RAM with Extended Data Out

This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor mal or Low power) are optional features of t

Samsung

三星

16M x 4bit CMOS Dynamic RAM with Extended Data Out

This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor mal or Low power) are optional features of t

Samsung

三星

16M x 4bit CMOS Dynamic RAM with Extended Data Out

This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor mal or Low power) are optional features of t

Samsung

三星

16M x 4bit CMOS Dynamic RAM with Extended Data Out

This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor mal or Low power) are optional features of t

Samsung

三星

16M x 4bit CMOS Dynamic RAM with Extended Data Out

This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor mal or Low power) are optional features of t

Samsung

三星

16M x 4bit CMOS Dynamic RAM with Extended Data Out

This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor mal or Low power) are optional features of t

Samsung

三星

16M x 4bit CMOS Dynamic RAM with Extended Data Out

This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor mal or Low power) are optional features of t

Samsung

三星

16M x 4bit CMOS Dynamic RAM with Extended Data Out

This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor mal or Low power) are optional features of t

Samsung

三星

16M x 4bit CMOS Dynamic RAM with Extended Data Out

This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor mal or Low power) are optional features of t

Samsung

三星

16M x 4bit CMOS Dynamic RAM with Extended Data Out

This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor mal or Low power) are optional features of t

Samsung

三星

16M x 4bit CMOS Dynamic RAM with Extended Data Out

This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor mal or Low power) are optional features of t

Samsung

三星

16M x 4bit CMOS Dynamic RAM with Extended Data Out Data Sheet

Samsung

三星

16M x 4bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f

Samsung

三星

K4E660412E产品属性

  • 类型

    描述

  • 型号

    K4E660412E

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    16M x 4bit CMOS Dynamic RAM with Extended Data Out

更新时间:2025-11-3 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG/三星
24+
NA/
3730
原装现货,当天可交货,原型号开票
SANSUM
24+
TSOP
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
SAMSUNG/三星
原厂封装
9800
原装进口公司现货假一赔百
SAMSUNG
6000
面议
19
TSOP
Samsung
NA
8560
一级代理 原装正品假一罚十价格优势长期供货
SAMSUNG/三星
23+
TSOP50
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
SAMSUNG
23+
TSOP
8000
只做原装现货
SAMSUNG
23+
TSOP
7000
SAMSUNG
12+
TSOP32
480
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SAMSUNG/三星
24+
TSOP32
60000
全新原装现货

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