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位置：首页 > IC中文资料第5543页 > K4E660412E

型号 功能描述 生产厂家 企业 LOGO 操作
K4E660412E

16M x 4bit CMOS Dynamic RAM with Extended Data Out

This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor mal or Low power) are optional features of t

SAMSUNG

三星

K4E660412E-JI45

16M x 4bit CMOS Dynamic RAM with Extended Data Out

This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor mal or Low power) are optional features of t

SAMSUNG

三星

K4E660412E-JI50

16M x 4bit CMOS Dynamic RAM with Extended Data Out

This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor mal or Low power) are optional features of t

SAMSUNG

三星

K4E660412E-JI60

16M x 4bit CMOS Dynamic RAM with Extended Data Out

This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor mal or Low power) are optional features of t

SAMSUNG

三星

K4E660412E-JP45

16M x 4bit CMOS Dynamic RAM with Extended Data Out

This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor mal or Low power) are optional features of t

SAMSUNG

三星

K4E660412E-JP50

16M x 4bit CMOS Dynamic RAM with Extended Data Out

This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor mal or Low power) are optional features of t

SAMSUNG

三星

K4E660412E-JP60

16M x 4bit CMOS Dynamic RAM with Extended Data Out

This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor mal or Low power) are optional features of t

SAMSUNG

三星

K4E660412E-TI45

16M x 4bit CMOS Dynamic RAM with Extended Data Out

This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor mal or Low power) are optional features of t

SAMSUNG

三星

K4E660412E-TI50

16M x 4bit CMOS Dynamic RAM with Extended Data Out

This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor mal or Low power) are optional features of t

SAMSUNG

三星

K4E660412E-TI60

16M x 4bit CMOS Dynamic RAM with Extended Data Out

This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor mal or Low power) are optional features of t

SAMSUNG

三星

K4E660412E-TP45

16M x 4bit CMOS Dynamic RAM with Extended Data Out

This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor mal or Low power) are optional features of t

SAMSUNG

三星

K4E660412E-TP50

16M x 4bit CMOS Dynamic RAM with Extended Data Out

This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor mal or Low power) are optional features of t

SAMSUNG

三星

K4E660412E-TP60

16M x 4bit CMOS Dynamic RAM with Extended Data Out

This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor mal or Low power) are optional features of t

SAMSUNG

三星

K4E660412E, K4E640412E

16M x 4bit CMOS Dynamic RAM with Extended Data Out Data Sheet

SAMSUNG

三星

K4E660412D

16M x 4bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional f

SAMSUNG

三星

K4E660412E产品属性

  • 类型

    描述

  • 型号

    K4E660412E

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    16M x 4bit CMOS Dynamic RAM with Extended Data Out

K4E660412E供应商更多...

更新时间：2026-5-25 9:34:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市创新迹电子有限公司
K4E660412E-TC60
SAMSUNG
22+
TSOP32
20000
公司只做原装 品质保障
询价
贸泽芯城（深圳）电子科技有限公司
K4E660412E-TP50
SAMSUNG/三星
23+
TSOP50
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
深圳市赛美科科技有限公司
K4E660412E-TC50
Samsung
NA
8560
一级代理 原装正品假一罚十价格优势长期供货
询价
深圳市纳艾斯科技有限公司
K4E660412E-TC60
SANSUM
24+
TSOP
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
询价
深圳市达豪电子有限公司
K4E660412E-TC60
SAMSUNG
25+
TSOP32
10000
只做原装,支持实单
询价
深圳市清腾科技有限公司
K4E660412E-TC60
SAMSUNG
26+
TSOP32
20000
原装
询价
深圳市众芯源半导体有限公司
K4E660412E-TC60
SAMSUNG
26+
TSOP32
20000
原装
询价
深圳市维基鸿电子有限公司
K4E660412E-TC60
SAMSUNG/三星
25+
TSOP32
10000
全新原装现货库存
询价
深圳市中飞凌科技有限公司
K4E660412E-TC60
SAMSUNG
26+
TSOP32
360000
原装现货
询价
天津市博通航睿技术有限公司
K4E660412E-TC60
SAMSUNG
23+
TSOP
7000
询价

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