型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
K4A60DB | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 1.6Ω(typ.) • High forward transfer admittance: |Yfs| = 2.2 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 600V) • Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) | TOSHIBA 东芝 | ||
SCRs General Description Available either in sensitive or standard gate triggering levels, the 4A SCR series is suitable to fit all modes of control found inapplications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, in-rush current limiting circuits | ADV 爱德微 | |||
SCRs General Description Available either in sensitive or standard gate triggering levels, the 4A SCR series is suitable to fit all modes of control found inapplications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, in-rush current limiting circuits | ADV 爱德微 | |||
SCRs General Description Available either in sensitive or standard gate triggering levels, the 4A SCR series is suitable to fit all modes of control found inapplications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, in-rush current limiting circuits | ADV 爱德微 | |||
SCRs General Description Available either in sensitive or standard gate triggering levels, the 4A SCR series is suitable to fit all modes of control found inapplications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, in-rush current limiting circuits | ADV 爱德微 | |||
SCRs General Description Available either in sensitive or standard gate triggering levels, the 4A SCR series is suitable to fit all modes of control found inapplications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, in-rush current limiting circuits | ADV 爱德微 |
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
24+ |
TO-220F |
60000 |
全新原装现货 |
|||
SAMSUNG |
FBGA |
1242 |
正品原装--自家现货-实单可谈 |
||||
TOSHIBA/东芝 |
24+ |
NA/ |
7000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
SAMSUNG(三星半导体) |
24+ |
BGA78 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
TOSHIBA/东芝 |
23+ |
TO-220 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
TOSHIBA/东芝 |
22+ |
TO-220F |
25000 |
只做原装进口现货,专注配单 |
|||
TOS |
20+ |
TO-220F |
38560 |
原装优势主营型号-可开原型号增税票 |
|||
TOSHIBA/东芝 |
23+ |
SMD |
880000 |
明嘉莱只做原装正品现货 |
|||
TOSHIBA/东芝 |
23+ |
TO-220F |
8000 |
只做原装现货 |
|||
SAMSUNG/三星 |
22+ |
78 FBGA |
4500 |
三星系列优势渠道 |
K4A60DB芯片相关品牌
K4A60DB规格书下载地址
K4A60DB参数引脚图相关
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- K4A8G165WB-BCRC/PB
- K4A8G165WB-BCRC
- K4A8G165WB-BCPB
- K4A8G165WB
- K4A8G085WC
- K4A8G085WB-BITD
- K4A8G085WB-BIRC
- K4A8G085WB-BIPB
- K4A8G085WB-BCTD
- K4A8G085WB-BCRCSLASHPB
- K4A8G085WB-BCRC/PB
- K4A8G085WB-BCRC
- K4A8G085WB-BCPB
- K4A8G085WB
- K4A8G045WB-BCTD
- K4A8G045WB-BCRCSLASHPB
- K4A8G045WB-BCRC/PB
- K4A8G045WB-BCRC
- K4A8G045WB-BCPB
- K4A8G045WB
- K4A60DA
- K4A4G165WF-BCWE
- K4A4G165WF-BCTD
- K4A4G165WF
- K4A4G165WE-BITD
- K4A4G165WE-BIRC
- K4A4G165WE-BIPB
- K4A4G165WE-BCWE
- K4A4G165WE-BCTD
- K4A4G165WE-BCRCT00
- K4A4G165WE-BCRC
- K4A4G165WE-BCPB
- K4A4G165WE
- K4A4G165WD-BCRCSLASHPB
- K4A4G165WD-BCRC/PB
- K4A4G165WD
- K4A4G085WF-BCWE
- K4A4G085WF
- K4A4G085WE-BITD
- K4A4G085WE-BIRC
- K-4985
- K-4970
- K4970
- K-4959
- K-4942
- K-4931
- K-474
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- K-470
- K4500
- K4212
- K41B0J
- K4145
- K4108
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- K4101
- K4100
K4A60DB数据表相关新闻
K4A4G165WF-BCTD 是三星推出的一款 DDR4 动态随机存取存储器(DRAM)。
K4A4G165WF-BCTD 是三星推出的一款 DDR4 动态随机存取存储器(DRAM)。
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DdatasheetPDF页码索引
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