N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • High reliability (Adoption of HVP process). • Attachment workability is good by Mica-less package. • Avalanche resistance guarantee.

N-Channel 30-V (D-S) MOSFET

文件：960.27 Kbytes Page：8 Pages

N-Channel 30-V (D-S) MOSFET

文件：960.27 Kbytes Page：8 Pages

N-Channel 650 V (D-S) MOSFET

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N-Channel 650 V (D-S) MOSFET

文件：1.08668 Mbytes Page：9 Pages

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

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N-Channel Silicon MOSFET General-Purpose Switching Device Applications

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Sanding

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Detectable Buried Barricade Tapes 400 Series

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Replace “XX” with 01 through 12 for number of poles 11/16 (.688) pitch

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Interconnection Cord with Plug G-Horizontal, Angled

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GP-IB Cable Assembly EMI/RFI Shielding Version

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