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型号 功能描述 生产厂家 企业 LOGO 操作

丝印代码:K408;Low-power dual operational amplifiers

Features Frequency compensation implemented internally Large DC voltage gain: 100 dB Wide bandwidth (unity gain): 1.1 MHz (temperature compensated) Very low supply current per channel essentially independent of supply voltage Low input bias current: 20 nA (temperature compensated) Low input

STMICROELECTRONICS

意法半导体

丝印代码:K408;Low Power Dual Operational Amplifiers

■ Internally frequency compensated ■ Large DC voltage gain: 100dB ■ Wide bandwidth (unity gain): 1.1mHz (temperature compensated) ■ Very low supply current/op (500μA) essentially independent of supply voltage ■ Low input bias current: 20nA (temperature compensated) ■ Low input offset volta

STMICROELECTRONICS

意法半导体

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

VBSEMI

微碧半导体

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • High reliability (Adoption of HVP process). • Attachment workability is good by Mica-less package. • Avalanche resistance guarantee.

SANYO

三洋

N-Channel 30-V (D-S) MOSFET

文件:960.27 Kbytes Page:8 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

文件:960.27 Kbytes Page:8 Pages

VBSEMI

微碧半导体

N-Channel 650 V (D-S) MOSFET

文件:1.08722 Mbytes Page:9 Pages

VBSEMI

微碧半导体

N-Channel 650 V (D-S) MOSFET

文件:1.08668 Mbytes Page:9 Pages

VBSEMI

微碧半导体

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

文件:56.16 Kbytes Page:5 Pages

SANYO

三洋

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

文件:56.52 Kbytes Page:5 Pages

SANYO

三洋

POWER TRANSISTORS(7A,150-200V,60W)

MOSPEC

统懋

Quadruple bidirectional ESD transient voltage suppressor

DESCRIPTION 4-bit wide monolithic bidirectional ESD transient voltage suppressor in a six lead SOT457 (SC-74) package. FEATURES • ESD rating >15 kV, according to IEC1000-4-2 • SOT457 surface mount package • Non-clamping range: −5 V to +5 V • Channel separation: >70 dB • Low reverse current:

PHILIPS

飞利浦

IN-LINE MINIATURE SINGLE PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - 4.0 Amperes)

FEATURES • Plastic material has Underwriters Laboratory Flammability Classification 94V-O • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • Surge overload rating: 200 Amperes peak • Pb free product are available : 99 Sn above can meet Rohs

PANJIT

強茂

HIGH VOLTAGE LINEAR REGULATOR POWER I.C.

DESCRIPTION The VB408, VB408B, VB408FI are fully protected positive adjustable voltage regulators made using a proprietary High Voltage VIPower technology. The device can be connected to a D.C. source (up to 400V) or in off-line application directly to the rectified main (110V/230V). It is parti

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE LINEAR REGULATOR POWER I.C.

DESCRIPTION The VB408, VB408B, VB408FI are fully protected positive adjustable voltage regulators made using a proprietary High Voltage VIPower technology. The device can be connected to a D.C. source (up to 400V) or in off-line application directly to the rectified main (110V/230V). It is parti

STMICROELECTRONICS

意法半导体

K408产品属性

  • 类型

    描述

  • 型号

    K408

  • 制造商

    Eaton Corporation

  • 功能描述

    PW9155 8 kVA 64 Battery(3-High)

更新时间:2026-7-22 20:55:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
25+
MSOP8
25368
原装正品,欢迎询价
STMICRO
25+
N/A
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
ST
22+
8MiniSO
9000
原厂渠道,现货配单
ST/意法
25+
MSOP8
15511
ST/意法原装特价LM258AST即刻询购立享优惠#长期有货
ST(意法)
26+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ST/意法
2517+
MSOP8
8850
只做原装正品现货或订货假一赔十!
ST
26+
MSOP8
20000
公司只有正品,实单来谈
ST
23+
8-MSOP
65600
ST/意法半导体
24+
Mini-SO-8
16960
原装正品现货支持实单
ST(意法半导体)
25+
MiniSO-8
499
全新原装

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