N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

4 V gate drive Low drain−source ON resistance : RDS (ON)= 0.039 Ω(typ.) High forward transfer admittance : |Yfs| = 11S (typ.) Low leakage current : IDSS= 100 µA (max) (VDS= 60 V) Enhancement−mode : Vth= 0.8~2.0 V (VDS= 10 V, ID= 1mA)

VHF push-pull power MOS transistor

DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for the transistors. FEATURES • High power gain • Easy power contr

Damper diode

DESCRIPTION Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellen

Diagonal 4.5mm (Type 1/4) CCD Image Sensor for NTSC Color Video Cameras

Description The ICX278AK is an interline CCD solid-state image sensor suitable for NTSC color video cameras with a diagonal 4.5mm (Type 1/4) system. Compared with the current product ICX208AK, basic characteristics such as sensitivity, smear and dynamic range are improved drastically through th

Silicon NPN Transistor Broadband RF Amp

Description: The NTE278 is a silicon NPN transistor in a TO39 type package designed specifically for broadband applications requiring good linearity. Usable as a high frequency current mode switch to 200mA. Features: • Low Noise Figure: NF = 3.0dB Typ @ f = 200MHz • High Current–Gain

FAMILY OF 1.8 V HIGH-SPEED RAIL-TO-RAIL INPUT/OUTPUT OPERATIONAL AMPLIFIERS WITH SHUTDOWN

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