N-channel MOS-FET

> Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

Silicon N Channel Power MOS FET High Speed Power Switching

Features • Low on-resistance • Capable of 2.5 V gate drive • Low drive current • High density mounting

SUBMINATURE/MULTI-FUNCTION/UNBRACKETED

文件：495.43 Kbytes Page：10 Pages

SINGLE-CHANNEL 100 mA POWER SWITCH

文件：247.09 Kbytes Page：13 Pages

SINGLE-CHANNEL 100 mA POWER SWITCH

文件：247.09 Kbytes Page：13 Pages