Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • No secondary breakdown • Suitable for Switching regulator Application High speed power switching

Customer Specification

Construction Diameters (In) 1) Component 1 2 X 1 COND a) Conductor 16 (26/30) AWG BC 0.060 b) Insulation 0.032 Wall, Nom. EPDM Rubber 0.127 (1) Separator Paper Tape, 10 Overlap, Min. (2) Color(s) Cond Color Cond Color Cond Color 1 BLACK 2 WHITE 2) Cable Assembly 2 Components Cabled a) Tw

High-Current Switching Applications

High-Current Switching Applications • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −2 A) • High-speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC5175

8-Channel DAC with PLL and Differential Outputs, 192 kHz, 24 Bits

FEATURES PLL generated or direct master clock Low EMI design DAC with 110 dB dynamic range and SNR −96 dB THD + N 3.3 V single supply Tolerance for 5 V logic inputs Supports 24 bits and 8 kHz to 192 kHz sample rates Differential DAC output Log volume control with autoramp function SPI® c

1933 F/R/W Coaxial DFB Laser Diode

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N-Channel MOSFET

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