TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOS)

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.0 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

isc N-Channel MOSFET Transistor

• DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) = 0.24Ω (typ.) • Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

SCHOTTKY BARRIER RECTIFIERS(15A,30-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diode

isc N-Channel MOSFET Transistor

• DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) = 0.24Ω (typ.) • Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

SCHOTTKY BARRIER RECTIFIER

文件：68.24 Kbytes Page：2 Pages