Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

Silicon N-Channel MOS FET

• Low on-resistance\n• Low drive current\n• Suitable for switching regulator and DC-DC converterApplication\nHigh speed power switching\n ;

Ultra High Sensitivity Gateable Channel Photomultiplier DC-Modules

Description The Channel Photomultiplier DC Module series is designed for all low light applications e.g. in industries, life science or medical analysis, in high energy physics or pure research. Features · High dynamic range · No cooling required · Very high stability in noise lev

2 -20 GHz Wideband AGC Amplifier

Key Features and Performance • 0.5 um MESFET Technology • 9 dB Nominal Gain • 3.5 dB NF Typical Midband • 17.5 dBm Nominal Pout @ P1dB • Bias 5-8V @ 60 mA • Dimensions 3.378mm x 2.032mm Primary Applications • Wideband Gain Block Amplifier • Wideband Low Noise Amplifier

Ultra High Sensitivity Channel Photomultiplier Head Including High Voltage Power Supply

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Ultra High Sensitivity Channel Photomultiplier Head Including High Voltage Power Supply

文件：562.12 Kbytes Page：5 Pages

Audio CODEC

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