Rail-to-rail input/output 20MHz GBP operational amplifiers

Description The TSV991/2/4 family of single, dual and quad operational amplifiers offers low voltage operation and rail-to-rail input and output. This family features an excellent speed/power consumption ratio, offering a 20 MHz gain bandwidth, stable for gain above 3 (100 pF capacitive load),

Power FET (Ceramic Package Type)

GENERAL DESCRIPTION\nThe KGF1322, housed in a ceramic package with integrated heat sink, is a discrete UHF-band power FET that features high efficiency, high output power, and low current operation. The KGF1322 specifications are guaranteed to a fixed matching circuit for 5.8 V and 850 MHz; external • High output power: 33 dBm (min.)\n• Low thermal resistance: 12°C/W (typ.)\n• Package: 3PHTP ;

Power FET (Ceramic Package Type)

GENERAL DESCRIPTION The KGF1322, housed in a ceramic package with integrated heat sink, is a discrete UHF-band power FET that features high efficiency, high output power, and low current operation. The KGF1322 specifications are guaranteed to a fixed matching circuit for 5.8 V and 850 MHz; exte

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文件：3.28167 Mbytes Page：16 Pages

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文件：3.28167 Mbytes Page：16 Pages

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文件：3.28167 Mbytes Page：16 Pages

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文件：3.28167 Mbytes Page：16 Pages

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文件：3.28167 Mbytes Page：16 Pages

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文件：3.28167 Mbytes Page：16 Pages

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文件：3.28167 Mbytes Page：16 Pages

POWER TRANSISTORS(8.0A,60-100V,70W)

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS 8.0 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 70 WATTS

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

L-BAND SPDT SWITCH

DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

L-BAND SPDT SWITCH

DESCRIPTION µPG132G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

L-BAND DPDT MMIC SWITCH

DESCRIPTION The µPG139GV is L-Band Double Pole, Double Throw (DPDT) switch developed for digital cellular or cordless telephone and PCS applications. This device feature low insertion loss, high handling power with low voltage operation. It is housed in a very small 8-pin plastic SSOP package ava