MILITARY APPROVED HIGH EFFICIENCY 2.5 AMP AND 6.0 AMP

DESCRIPTION This “ultrafast recovery” rectifier diode series is military qualified to MIL-PRF-19500/477 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 2.5 Amp rated rectifiers for working peak reverse voltages from 50 to 150 volts are

封装/外壳：SQ-MELF 包装：散装 描述：D MET 2.5A SFST 150V HRV 2FFTV 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：SQ-MELF，A 包装：管件 描述：DIODE GEN PURP 150V 1A D5A 分立半导体产品 二极管 - 整流器 - 单

Rectifier Diode Switching 2-Pin 150V, 2.5A, 25ns A-MELF Bag

Rectifier Diode Switching 2-Pin 150V, 2.5A, 25ns A-MELF Bag T/R

HERMETIC AXIAL / MELF LEAD RECTIFIER

Ultrafast Recovery Rectifier • Hermetic, non-cavity glass package • Metallurgically bonded • Operating and Storage Temperature: -65°C to +175°C

RECTIFIER, up to 150V, 2.5A, 25ns

AXIAL LEADED HERMETICALLY SEALED SUPERFAST RECTIFIER DIODE • Very low revserse recovery time • Hermetical sealed in Metoxilite fused metal oxide • Low swiching losses • Soft, non-snap off, recovery characteristics • Very low forward voltage drop

Ultrafast Recovery Rectifier

Ultrafast Recovery Rectifier • Hermetic, non-cavity glass package • Metallurgically bonded • Operating and Storage Temperature: -65°C to +175°C

2.5 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS

FEATURES: • Chip Outline Dimensions: 41 x 41 mils • Chip Thickness: 8 to 12 mils • Anode Metallization: Aluminum • Metallization Thickness: 50,000Ã Nominal • Bonding Area: 23 x 23 mils Min. • Back Metallization: Gold • Junction Passivated with Thermal Silicon Dioxide - Planar Design • Back

ULTRA FAST MILITARY RECTIFIERS

文件：53.36 Kbytes Page：2 Pages