POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.085ohm, Id=30A)

200 Volt, 0.085Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-establish advantages of M

N-CHANNEL MOSFET Qualified per MIL-PRF-19500/543

DESCRIPTION This family of 2N6764, 2N6766, 2N6768 and 2N6770 switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in a thru hole TO-254AA leaded package. Microsemi also offers numerous other transistor products to

N-channel enhancement mode MOSFET power transistor

High-Reliability Transistors

HiRel MOSFETs

Repetitive Avalanche Ratings

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Repetitive Avalanche Ratings

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N-Channel Power MOSFETs, 30A, 150V/200V

N-Channel Power MOSFETs, 30A, 150V/200V Power And Discrete Division

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

FEATURES: • Fast switching times • Low RDS(on) HDMOS™ process • Rugged polysilicon gate cell structure • Excellent high voltage stability • Low input capacitance • Improved high temperature reliability APPLICATIONS: • Switching power supplies • Motor controls • Audio Amplifiers • Invert

N-CHANNEL MOSFET

DESCRIPTION This family of 2N6764, 2N6766, 2N6768 and 2N6770 switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in a thru hole TO-254AA leaded package. Microsemi also offers numerous other transistor products to

N-CHANNEL MOSFET

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N-CHANNEL MOSFET

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