JFET VHF/UHF Amplifiers

JFET VHF/UHF Amplifiers N−Channel — Depletion

N-Channel RF Amplifier

N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92.

SFET RF,VHF, UHF, Amplitiers

N-Channel RF Amplifier • This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. • Sourced from process 50.

N-Channel JFET High Frequency Amplifier

FEATURES • Industry Standard Part in Low Cost Plastic Package • High Power Gain • Low Noise • Dynamic Range Greater Than 100dB • Easily Matched to 75Ω Input APPLICATIONS • VHF/UHF Amplifiers • Oscillators • Mixers

SINGLE N-CHANNEL HIGH FREQUENCY JFET

FEATURES Direct Replacement For SILICONIX U/J/SST308 SERIES OUTSTANDING HIGH FREQUENCY GAIN Gpg = 11.5dB LOW HIGH FREQUENCY NOISE NF = 2.7dB

JFET VHF/UHF Amplifiers N-Channel - Depletion

N−Channel — Depletion Features • Pb−Free Packages are Available*

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

N-CHANNEL JFETS

N-Channel JFETs

N-Channel JFETs

DESCRIPTION The J/SST/U308 series offers superb amplification characteristics. Of special interest is its high-frequency performance. Even at 450 MHz, this series offers high power gain at low noise. Low-cost J series TO-226AA (TO-92) packaging supports automated assembly with tape-and-reel opti

N-Channel JFETs

DESCRIPTION The J/SST/U308 series offers superb amplification characteristics. Of special interest is its high-frequency performance. Even at 450 MHz, this series offers high power gain at low noise. Low-cost J series TO-226AA (TO-92) packaging supports automated assembly with tape-and-reel opti

N-Channel Silicon Junction Field-Effect Transistor

N-Channel Silicon Junction Field-Effect Transistor ● Mixers ● Oscillators ● VHF/UHF Amplifiers

N-Channel JFETs

DESCRIPTION The J/SST/U308 series offers superb amplification characteristics. Of special interest is its high-frequency performance. Even at 450 MHz, this series offers high power gain at low noise. FEATURES ●
Excellent High Frequency Gain: Gps 11.5 dB @ 450 MHz ●
Very Low Noise: 2.7 dB @

N-Channel JFETs

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Very Low Distortion

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Linear Systems replaces discontinued Siliconix J309

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Very High System Sensitivity

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N-Channel RF Amplifier

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封装/外壳：TO-226-3，TO-92-3 长体 包装：带 描述：JFET N-CH 25V 30MA TO92 分立半导体产品 晶体管 - FET，MOSFET - 射频

JFET VHF/UHF 放大器

N-Channel JFETs

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N-Channel RF Amplifier

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JFET VHF/UHF Amplifiers N.Channel . Depletion

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JFET VHF/UHF Amplifiers N-Channel - Depletion

N−Channel — Depletion Features • Pb−Free Packages are Available*

N-Channel RF Amplifier

文件：213.26 Kbytes Page：6 Pages

JFET VHF/UHF Amplifiers N.Channel . Depletion

文件：72.35 Kbytes Page：5 Pages

N-Channel RF Amplifier

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封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：卷带（TR） 描述：JFET N-CH 25V 30MA TO92 分立半导体产品 晶体管 - FET，MOSFET - 射频

N-CHANNEL JFET

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JFET VHF/UHF Amplifiers N.Channel . Depletion

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Military Grade Ethernet Switch On Board (ESoB)

PRODUCT DESCRIPTION One of the most exciting advancement in technology over the last decade has been unmanned vehicles i n cluding: • Unmanned aerial vehicles (UAVs) or Drones • Land autonomous vehicles (UGVs) • Robots • Other unmanned support vehicles These vehicles must be agile, compact

SCHOTTKY RECTIFIER

175℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel plated; Terminals

Measure Earth Resistance (20/200/2000廓 ranges)

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Guard ring for enhanced ruggedness and long term reliability

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Guard ring for enhanced ruggedness and long term reliability

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