High-Speed IGBT

for 20-50 kHz Switching

Features

• Silicon Chip on Direct-Copper Bond

(DCB) Substrate

• Isolated Mounting Surface

• 2500V~ Electrical Isolation

• Optimized for Low Switching Losses

• Square RBSOA

• Positive Thermal Coefficient of

Vce(sat)

• Anti-Parallel Ultra Fast Diode

• High Current Handling Capability

• International Standard Package

Advantages

• High Power Density

• Low Gate Drive Requirement

Applications

• High Frequency Power Inverters

• UPS

• Motor Drives

• SMPS

• PFC Circuits

• Battery Chargers

• Welding Machines

• Lamp Ballasts