位置：IXTT50P10 > IXTT50P10详情
IXTT50P10中文资料
IXTT50P10数据手册规格书PDF详情
Standard Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
Features
• International standard packages JEDEC TO-247 AD
• Low RDS(ON) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance (
Applications
• High side switching
• Push-pull amplifiers
• DC Choppers
• Automatic test equipment
Advantages
• Easy to mount with 1 screw (isolated mounting screw hole)
• Space savings
• High power density
IXTT50P10产品属性
- 类型
描述
- 型号
IXTT50P10
- 功能描述
MOSFET -50 Amps -100V 0.055 Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
更新时间：2025-12-2 15:30:00
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
24+ |
TO-268 |
8866 |
||||
IXYS |
25+ |
TO-268 |
326 |
就找我吧!--邀您体验愉快问购元件! |
|||
IXYS |
22+ |
TO2683 D3Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
|||
IXYS |
23+ |
TO-268 |
8000 |
只做原装现货 |
|||
IXYS |
23+ |
TO-268 |
7000 |
||||
IXYS/艾赛斯 |
23+ |
TO-268S |
26008 |
原装正品 华强现货 |
|||
IXYS/LITTELFUSE |
2105 |
TO-268 |
15800 |
全新原装正品现货直销 |
|||
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
IXYS/艾赛斯 |
23+ |
TO-268 |
75322 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
24+ |
N/A |
57000 |
一级代理-主营优势-实惠价格-不悔选择 |
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IXTT50P10 芯片相关型号
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