High Voltage MOSFET

N-Channel Enhancement Mode Avalanche Energy Rated

Features

• International standard packages

• Low RDS (on) HDMOSTM process

• Rugged polysilicon gate cell structure

• Low package inductance (< 5 nH) - easy to drive and to protect

• Fast switching times

Applications

• Switch-mode and resonant-mode power supplies

• Flyback inverters

• DC choppers

Advantages

• Space savings

• High power density