MegaMOS™ FET

N-Channel Enhancement Mode

Features

• International standard packages

• Low RDS (on) HDMOSTM process

• Rugged polysilicon gate cell structure

• Low package inductance (< 5 nH)

- easy to drive and to protect

• Fast switching times

Applications

• Switch-mode and resonant-mode power supplies

• Motor controls

• Uninterruptible Power Supplies (UPS)

• DC choppers

Advantages

• Easy to mount with 1 screw (TO-247) (isolated mounting screw hole)

• Space savings

• High power density