Features

● RF capable MOSFETs

● Double metal process for low gate resistance

● Rugged polysilicon gate cell structure

● Unclamped Inductive Switching (UIS) rated

● Low package inductance

- easy to drive and to protect

● Fast intrinsic rectifier

Applications

● DC-DC converters

● Switched-mode and resonant-mode

power supplies, >500kHz switching

● DC choppers

● 13.5 MHz industrial applications

● Pulse generation

● Laser drivers

● RF amplifiers

Advantages

● Space savings

● High power density