N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family

Features

• International standard packages

• Low RDS (on) HDMOSTM process

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS) rated

• Low package inductance - easy to drive and to protect

• Fast intrinsic Diode

Applications

• DC-DC converters

• Battery chargers

• Switched-mode and resonant-mode power supplies

• DC choppers

• AC motor control

• Temperature and lighting controls

Advantages

• Easy to mount with 1 screw (TO-247) (isolated mounting screw hole)

• Space savings

• High power density