HiPerFET Power MOSFETs Q-Class

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances

Features

• IXYS advanced low gate charge process

• International standard packages

• Low gate charge and capacitance

- easier to drive

- faster switching

• Low RDS (on)

• Unclamped Inductive Switching (UIS) rated

• Molding epoxies meet UL 94 V-0 flammability classification

Advantages

• Easy to mount

• Space savings

• High power density