HiPerFET™ Power MOSFETs ISOPLUS247™ (Electrically Isolated Backside)

Single MOSFET Die

Features

• Silicon chip on Direct-Copper-Bond substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

• Low drain to tab capacitance(<35pF)

• Low RDS (on) HDMOSTM process

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS) rated

• Fast intrinsic Rectifier

Applications

• DC-DC converters

• Battery chargers

• Switched-mode and resonant-mode power supplies

• DC choppers

• AC and DC motor and servo controls

• Amplifiers

Advantages

• Easy assembly

• Space savings

• High power density

• Low collector capacitance to ground (low EMI)