HiPerFET™ Power MOSFETs Q-Class

N-Channel Enhancement Mode

Avalanche Rated, Low Qg, High dv/dt

Features

• IXYS advanced low Qg process

• Low gate charge and capacitances

- easier to drive

- faster switching

• International standard packages

• Low RDS (on)

• Rated for unclamped Inductive load switching (UIS) rated

• Molding epoxies meet UL 94 V-0 flammability classification

Advantages

• Easy to mount

• Space savings

• High power density