RF Power MOSFET

♦ N-Channel Enhancement Mode

♦ Low Qg and Rg

♦ High dv/dt

♦ Nanosecond Switching

♦ 30MHz Maximum Frequency

Features

• Isolated Substrate

− high isolation voltage (>2500V)

− excellent thermal transfer

− Increased temperature and power cycling capability

• IXYS advanced low Qg process

• Low gate charge and capacitances

− easier to drive

− faster switching

• Low RDS(on)

• Very low insertion inductance (<2nH)

• No beryllium oxide (BeO) or other hazardous materials